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- Z-RAM abstract "Zero-capacitor (registered trademark, Z-RAM) is a novel dynamic random-access memory technology developed by Innovative Silicon based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. Innovative Silicon claims the technology offers memory access speeds similar to the standard six-transistor static random-access memory cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.".
- Z-RAM wikiPageExternalLink articlen.asp?pid=518&id=5434.
- Z-RAM wikiPageID "30857369".
- Z-RAM wikiPageRevisionID "602555024".
- Z-RAM hasPhotoCollection Z-RAM.
- Z-RAM subject Category:Types_of_RAM.
- Z-RAM comment "Zero-capacitor (registered trademark, Z-RAM) is a novel dynamic random-access memory technology developed by Innovative Silicon based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors.".
- Z-RAM label "Z-RAM".
- Z-RAM label "Z-RAM".
- Z-RAM label "Z-RAM".
- Z-RAM label "Zero-capacitor random-access memory".
- Z-RAM label "零电容随机存储器".
- Z-RAM sameAs Z-RAM.
- Z-RAM sameAs Z-RAM.
- Z-RAM sameAs Zero-capacitor_random-access_memory.
- Z-RAM sameAs m.0b0bzp.
- Z-RAM sameAs Q2409818.
- Z-RAM sameAs Q2409818.
- Z-RAM wasDerivedFrom Z-RAM?oldid=602555024.
- Z-RAM isPrimaryTopicOf Z-RAM.