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• catalog contributor b2283934.
• catalog contributor b2283935.
• catalog contributor b2283936.
• catalog contributor b2283937.
• catalog created "c1986.".
• catalog date "1986".
• catalog date "c1986.".
• catalog dateCopyrighted "c1986.".
• catalog description "Competing initial reactions at transition metal/silicon interfaces / G.W. Rubloff -- Electronic structure of silicide-silicon interfaces / O. Bisi -- In situ ellipsometric studies of palladium silicide formation / S.M. Kelso, R.J. Nemanish, & C.M. Doland -- High spatial-resolution analysis of lateral silicide formation / J.C. Barbour, P.E. Batson, & J.W. Mayer -- First phase nucleation and growth of titanium disilicide with an emphasis on the influence of oxygen / H.J.W. van Houtum & I.J.M.M. Raaijmakers -- Stability of thin film amorphous metal alloys / F.W. Saris [and others] -- Temperature dependent intermixing at the V/Ge(111) interface / M. del Giudice [and others] -- Problems in realistic modelling of interfacial reactions / C.W. Allen & G.A. Sargent -- Compound formation and silicon behavior in titanium and tantalum layered aluminum films / B.W. Shen [and others] -- Crystallization of amorphous silicon during thin film gold reaction /".
• catalog description "Formation of stacking fault tetrahedra during epitaxial growth of silicon and germanium-silicon layers on o silicon substrates / D. Brasen, S. Nakahara, & J.C. Bean -- Reactions and interdiffusion at III-V compound semiconductor-metal interfaces / L.J. Brillson -- Thermodynamically stable metal/III-V compound-semiconductor interfaces / R.S. Williams [and others] -- An investigation of the cause of initial band bending of a cleaved clean n-GaAs(110) surface / K.K. Chin [and others] -- Characterization of an extended reactive noble-metal/III-V semiconductor interface : Cu/GaAs(110) / J.J. Joyce & J.H. Weaver -- Cross-sectional TEM study of phase separation in reaction of Ni-Ta films with GaAs / A. Lahav, M. Eizenberg, & Y. Komem -- Electrical properties of epitaxial silicide-silicon interfaces / R.T. Tung [and others] -- Schottky barrier and electronic states at silicide-silicon interfaces / P.E. Schmid [and others] --".
• catalog description "Includes bibliographies and indexes.".
• catalog description "L.G. Hultman, P.A. Psaras, & H.T.G. Hentzell -- Ion-beam induced silicide formation : markers and moving species / L.S. Hung & J.W. Mayer -- Formation of GaAs ohmic contacts by using ion beam mixing / S. Furukawa [and others] -- Can amorphization be induced by ion mixing in Ag-Cu and Ag-Ni systems? / B.X. Liu [and others] -- Bombardment-induced mixing of Mo films of Si / A.H. van Ommen [and others] -- Computer simulation of marker evolution upon ion irradiation / F-Z. Cui, H-D. Li & B-X. Liu -- Epitaxial growth of transition metal silicides on silicon / L.J. Chen, H.C. Cheng, & W.T. Lin -- Initial nucleation and the effects of epitaxial silicide formation / R.J. Nemanich [and others] -- Epitaxial formation of rare-earth silicides by rapid annealing / J.A. Knapp & S.T. Picraux -- Silicon layers grown on patterned substrates by liquid phase epitaxy / E. Bauser [and others] --".
• catalog description "Pulsed laser atom probe analysis of stoichiometry variations in GaAlAs / C.R.M. Grovenor, A. Cerezo & G.D.W. Smith -- Structural evaluation of interfaces by electron diffraction / T.D. Sullivan & D.G. Ast -- SPA-LEED measurements on etched and polished silicon (111) surfaces / P.O. Hahn -- Non-destructive characterization of semiconductors using organic thin films / S.R. Forrest, M.L. Kaplan, & P.H. Schmidt -- Interconnects and contacts for VLSI applications / A.K. Sinha -- High dose implantation of nickel into silicon / G.J. Campisi [and others] -- Formation of silicides by rapid thermal annealing over polycrystalline silicon / J. Narayan [and others] -- The effect of the oxide interface on the material and electrical properites of polysilicon contacts / D.E. Burk, J.W. Newkirk, & M-S. Jo -- Effects of ion implantation doping on the formation of titanium silicide on the diffusion layers / H. Matsui [and others].".
• catalog description "Structural characterization and Schottky barrier height measurements of epitaxial NiSi₂ on Si / B.D. Hunt [and others] -- Silicide-silicon interface states / E.S. Yang [and others] -- Microscopic model of metal-semiconductor contacts and semiconductor heterojunctions / C. Mailhiot & C.B. Duke -- Deposition of thin insulating films by plasma enhanced CVD / G. Lucovsky [and others] -- Formation of silicon nitride films newly developed by the ion and vapour deposition method / F. Sugawara [and others] -- Structural investigation of Ti-N films / M. Asplund [and others] -- AES and XPS studies of the chemical effects at the magneto-optic/dielectric interface / D. Coulman & T. Anthony -- Wet and dry oxidation of single crystal [beta]-SiC : kinetics and interface characteristics / J.W. Palmour, H.J. Kim, & R.F. Davis -- Microstructure of metal-GaAs interfaces / T.S. Kuan [and others] --".
• catalog extent "xxi, 841 p. :".
• catalog identifier "0931837197 :".
• catalog isPartOf "Materials Research Society symposia proceedings, 0272-9172 ; v. 54".
• catalog issued "1986".
• catalog issued "c1986.".
• catalog language "eng".
• catalog publisher "Pittsburgh, Pa. : Materials Research Society,".
• catalog subject "621.381/7 19".
• catalog subject "Layer structure (Solids) Congresses.".
• catalog subject "QC176.84.S93 T49 1986".
• catalog subject "Surface chemistry Congresses.".
• catalog subject "Thin films Surfaces Congresses.".
• catalog tableOfContents "Competing initial reactions at transition metal/silicon interfaces / G.W. Rubloff -- Electronic structure of silicide-silicon interfaces / O. Bisi -- In situ ellipsometric studies of palladium silicide formation / S.M. Kelso, R.J. Nemanish, & C.M. Doland -- High spatial-resolution analysis of lateral silicide formation / J.C. Barbour, P.E. Batson, & J.W. Mayer -- First phase nucleation and growth of titanium disilicide with an emphasis on the influence of oxygen / H.J.W. van Houtum & I.J.M.M. Raaijmakers -- Stability of thin film amorphous metal alloys / F.W. Saris [and others] -- Temperature dependent intermixing at the V/Ge(111) interface / M. del Giudice [and others] -- Problems in realistic modelling of interfacial reactions / C.W. Allen & G.A. Sargent -- Compound formation and silicon behavior in titanium and tantalum layered aluminum films / B.W. Shen [and others] -- Crystallization of amorphous silicon during thin film gold reaction /".
• catalog tableOfContents "Formation of stacking fault tetrahedra during epitaxial growth of silicon and germanium-silicon layers on o silicon substrates / D. Brasen, S. Nakahara, & J.C. Bean -- Reactions and interdiffusion at III-V compound semiconductor-metal interfaces / L.J. Brillson -- Thermodynamically stable metal/III-V compound-semiconductor interfaces / R.S. Williams [and others] -- An investigation of the cause of initial band bending of a cleaved clean n-GaAs(110) surface / K.K. Chin [and others] -- Characterization of an extended reactive noble-metal/III-V semiconductor interface : Cu/GaAs(110) / J.J. Joyce & J.H. Weaver -- Cross-sectional TEM study of phase separation in reaction of Ni-Ta films with GaAs / A. Lahav, M. Eizenberg, & Y. Komem -- Electrical properties of epitaxial silicide-silicon interfaces / R.T. Tung [and others] -- Schottky barrier and electronic states at silicide-silicon interfaces / P.E. Schmid [and others] --".
• catalog tableOfContents "L.G. Hultman, P.A. Psaras, & H.T.G. Hentzell -- Ion-beam induced silicide formation : markers and moving species / L.S. Hung & J.W. Mayer -- Formation of GaAs ohmic contacts by using ion beam mixing / S. Furukawa [and others] -- Can amorphization be induced by ion mixing in Ag-Cu and Ag-Ni systems? / B.X. Liu [and others] -- Bombardment-induced mixing of Mo films of Si / A.H. van Ommen [and others] -- Computer simulation of marker evolution upon ion irradiation / F-Z. Cui, H-D. Li & B-X. Liu -- Epitaxial growth of transition metal silicides on silicon / L.J. Chen, H.C. Cheng, & W.T. Lin -- Initial nucleation and the effects of epitaxial silicide formation / R.J. Nemanich [and others] -- Epitaxial formation of rare-earth silicides by rapid annealing / J.A. Knapp & S.T. Picraux -- Silicon layers grown on patterned substrates by liquid phase epitaxy / E. Bauser [and others] --".
• catalog tableOfContents "Pulsed laser atom probe analysis of stoichiometry variations in GaAlAs / C.R.M. Grovenor, A. Cerezo & G.D.W. Smith -- Structural evaluation of interfaces by electron diffraction / T.D. Sullivan & D.G. Ast -- SPA-LEED measurements on etched and polished silicon (111) surfaces / P.O. Hahn -- Non-destructive characterization of semiconductors using organic thin films / S.R. Forrest, M.L. Kaplan, & P.H. Schmidt -- Interconnects and contacts for VLSI applications / A.K. Sinha -- High dose implantation of nickel into silicon / G.J. Campisi [and others] -- Formation of silicides by rapid thermal annealing over polycrystalline silicon / J. Narayan [and others] -- The effect of the oxide interface on the material and electrical properites of polysilicon contacts / D.E. Burk, J.W. Newkirk, & M-S. Jo -- Effects of ion implantation doping on the formation of titanium silicide on the diffusion layers / H. Matsui [and others].".
• catalog tableOfContents "Structural characterization and Schottky barrier height measurements of epitaxial NiSi₂ on Si / B.D. Hunt [and others] -- Silicide-silicon interface states / E.S. Yang [and others] -- Microscopic model of metal-semiconductor contacts and semiconductor heterojunctions / C. Mailhiot & C.B. Duke -- Deposition of thin insulating films by plasma enhanced CVD / G. Lucovsky [and others] -- Formation of silicon nitride films newly developed by the ion and vapour deposition method / F. Sugawara [and others] -- Structural investigation of Ti-N films / M. Asplund [and others] -- AES and XPS studies of the chemical effects at the magneto-optic/dielectric interface / D. Coulman & T. Anthony -- Wet and dry oxidation of single crystal [beta]-SiC : kinetics and interface characteristics / J.W. Palmour, H.J. Kim, & R.F. Davis -- Microstructure of metal-GaAs interfaces / T.S. Kuan [and others] --".
• catalog title "Thin films : interfaces and phenomena : symposium held December 2-6, 1985, Boston, Massachusetts, USA / editors, R.J. Nemanich, P.S. Ho, S.S. Lau.".
• catalog type "Conference proceedings. fast".
• catalog type "text".