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- catalog contributor b3182914.
- catalog created "1989.".
- catalog date "1989".
- catalog date "1989.".
- catalog dateCopyrighted "1989.".
- catalog description "Includes bibliographical references.".
- catalog description "Thesis (Ph. D.)--Harvard University, 1989.".
- catalog extent "xvii, 97 leaves :".
- catalog hasFormat "Effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers.".
- catalog isFormatOf "Effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers.".
- catalog issued "1989".
- catalog issued "1989.".
- catalog language "eng".
- catalog relation "Effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers.".
- catalog subject "Amorphous substances.".
- catalog subject "Diffusion.".
- catalog subject "Germanium.".
- catalog subject "Ion implantation.".
- catalog subject "Silicon.".
- catalog subject "Thin films, Multilayered.".
- catalog title "The effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers / by Byungwoo Park.".
- catalog type "text".