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- catalog contributor b10941397.
- catalog created "c1998.".
- catalog date "1998".
- catalog date "c1998.".
- catalog dateCopyrighted "c1998.".
- catalog description "GaN Materials for High-Power Microwave Amplifiers / Lester F. Eastman, Kenneth Chu and Joseph Smart [and others] -- Double-Channel AlGaN/GaN Heterostructure Field-Effect Transistor / R. Gaska, M.S. Shur and J.W. Yang [et al.] -- Temperature Dependence of Breakdown Field in p-[pi]-n GaN Diodes / A. Osinsky, M.S. Shur and R. Gaska -- Low Frequency Noise in n-Type Gallium Nitride / N. Dyakonova, M. Levinshtein and S. Contreras [et al.] -- Nitride-Based High-Power Devices: Transport Properties, Linear Defects, and Goals / Z.Z. Bandic, P.M. Bridger and E.C. Piquette [et al.] -- Growth of AlN Single Crystals / Glen A. Slack -- A New Approach to Growth of Bulk ZnO Crystals for Wide-Bandgap Applications / G. Agarwal, J.E. Nause and D.N. Hill.".
- catalog description "Includes bibliographical references and index.".
- catalog extent "xiii, 565 p. :".
- catalog identifier "1558994181".
- catalog isPartOf "Materials Research Society symposia proceedings ; v. 512.".
- catalog isPartOf "Materials Research Society symposium proceedings ; v. 512".
- catalog issued "1998".
- catalog issued "c1998.".
- catalog language "eng".
- catalog publisher "Warrendale, Penn. : Materials Research Society,".
- catalog subject "621.3815 21".
- catalog subject "Power semiconductors Congresses.".
- catalog subject "Semiconductors Thermal properties Congresses.".
- catalog subject "TK7871.85 .W53 1998".
- catalog subject "Wide gap semiconductors Congresses.".
- catalog tableOfContents "GaN Materials for High-Power Microwave Amplifiers / Lester F. Eastman, Kenneth Chu and Joseph Smart [and others] -- Double-Channel AlGaN/GaN Heterostructure Field-Effect Transistor / R. Gaska, M.S. Shur and J.W. Yang [et al.] -- Temperature Dependence of Breakdown Field in p-[pi]-n GaN Diodes / A. Osinsky, M.S. Shur and R. Gaska -- Low Frequency Noise in n-Type Gallium Nitride / N. Dyakonova, M. Levinshtein and S. Contreras [et al.] -- Nitride-Based High-Power Devices: Transport Properties, Linear Defects, and Goals / Z.Z. Bandic, P.M. Bridger and E.C. Piquette [et al.] -- Growth of AlN Single Crystals / Glen A. Slack -- A New Approach to Growth of Bulk ZnO Crystals for Wide-Bandgap Applications / G. Agarwal, J.E. Nause and D.N. Hill.".
- catalog title "Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A. / editors, Stephen DenBaars ... [et al.].".
- catalog type "Conference proceedings. fast".
- catalog type "San Francisco (Calif., 1998) swd".
- catalog type "text".