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- catalog contributor b10952642.
- catalog created "c1998.".
- catalog date "1998".
- catalog date "c1998.".
- catalog dateCopyrighted "c1998.".
- catalog description "Includes bibliographical references and index.".
- catalog description "Ultra Shallow Junction Formation by RTA at High Temperature for Short Heating Cycle Time / S. Saito, S. Shishiguchi and A. Mineji [and others] -- Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 keV / M. Kase, Y. Kikuchi and H. Niwa [et al.] -- Ultra Shallow Junction Formation by Cluster Ion Implantation / Jiro Matsuo, Takaaki Aoki and Ken-ichi Goto [et al.] -- Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation / Kentaro Shibahara, Hiroaki Furumoto and Kazuhiko Egusa [et al.] -- The Importance of Pairing Reactions for the Modelling of Defect-Dopant Interactions in Silicon / I. Bork and A.V. Schwerin.".
- catalog extent "xi, 228 p. :".
- catalog hasFormat "Silicon front-end technology--materials processing and modelling.".
- catalog identifier "1558994386".
- catalog isFormatOf "Silicon front-end technology--materials processing and modelling.".
- catalog isPartOf "Materials Research Society symposia proceedings ; v. 532.".
- catalog isPartOf "Materials Research Society symposium proceedings ; v. 532".
- catalog issued "1998".
- catalog issued "c1998.".
- catalog language "eng".
- catalog publisher "Warrendale, Pa. : Materials Research Society,".
- catalog relation "Silicon front-end technology--materials processing and modelling.".
- catalog subject "621.3815/2 21".
- catalog subject "Semiconductor doping Congresses.".
- catalog subject "Semiconductor doping.".
- catalog subject "Semiconductors Defects Congresses.".
- catalog subject "Semiconductors Defects.".
- catalog subject "Semiconductors Design and construction Congresses.".
- catalog subject "Semiconductors Design and construction.".
- catalog subject "TK7871.85 .S5464 1998".
- catalog tableOfContents "Ultra Shallow Junction Formation by RTA at High Temperature for Short Heating Cycle Time / S. Saito, S. Shishiguchi and A. Mineji [and others] -- Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 keV / M. Kase, Y. Kikuchi and H. Niwa [et al.] -- Ultra Shallow Junction Formation by Cluster Ion Implantation / Jiro Matsuo, Takaaki Aoki and Ken-ichi Goto [et al.] -- Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation / Kentaro Shibahara, Hiroaki Furumoto and Kazuhiko Egusa [et al.] -- The Importance of Pairing Reactions for the Modelling of Defect-Dopant Interactions in Silicon / I. Bork and A.V. Schwerin.".
- catalog title "Silicon front-end technology--materials processing and modelling / editors, Nichoals E.B. Cowern ... [et al.].".
- catalog type "Conference proceedings. fast".
- catalog type "text".