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- catalog contributor b10976812.
- catalog contributor b10976813.
- catalog created "c1998.".
- catalog date "1998".
- catalog date "c1998.".
- catalog dateCopyrighted "c1998.".
- catalog description "3-D Atomistic Simulations of Submicron Device Fabrication / Marius M. Bunea and Scott T. Dunham -- Arsenic Deactivation in Silicon / M.A. Berding and A. Sher -- A New Practical Approach to Implement a Transient Enhanced Diffusion Model into an FEM-Based 2-D Process Simulator / Noriyuki Sugiyasu, Kainia Suzuki and Syuichi Kojima [and others] -- Atomistic Modelling of the Ion Implantation Step Within a 2-D Process Simulator / Bruno Schmidt, Matthias Posselt and Norbert Strecker [et al.] -- Computationally Efficient Model for 2-D Ion Implantation Simulation / Misha Temkin and Ivan Chakarov -- A Three-Dimensional Monte Carlo Model for Phosphorus Implants into (100) Single-Crystal Silicon / Myung-Sik Son and Ho-Jung Hwang.".
- catalog description "Includes bibliographical references and indexes.".
- catalog extent "ix, 273 p. :".
- catalog hasFormat "Semiconductor process and device performance modelling.".
- catalog identifier "1558993959".
- catalog isFormatOf "Semiconductor process and device performance modelling.".
- catalog isPartOf "Materials Research Society symposia proceedings ; v. 490.".
- catalog isPartOf "Materials Research Society symposium proceedings, 0272-9172 ; v. 490".
- catalog issued "1998".
- catalog issued "c1998.".
- catalog language "eng".
- catalog publisher "Warrendale, Pa. : Materials Research Society,".
- catalog relation "Semiconductor process and device performance modelling.".
- catalog subject "621.3815/2/015118 21".
- catalog subject "Semiconductors Defects Congresses.".
- catalog subject "Semiconductors Mathematical models Congresses.".
- catalog subject "Solid state physics Congresses.".
- catalog subject "TK7871.85 .S46697 1998".
- catalog tableOfContents "3-D Atomistic Simulations of Submicron Device Fabrication / Marius M. Bunea and Scott T. Dunham -- Arsenic Deactivation in Silicon / M.A. Berding and A. Sher -- A New Practical Approach to Implement a Transient Enhanced Diffusion Model into an FEM-Based 2-D Process Simulator / Noriyuki Sugiyasu, Kainia Suzuki and Syuichi Kojima [and others] -- Atomistic Modelling of the Ion Implantation Step Within a 2-D Process Simulator / Bruno Schmidt, Matthias Posselt and Norbert Strecker [et al.] -- Computationally Efficient Model for 2-D Ion Implantation Simulation / Misha Temkin and Ivan Chakarov -- A Three-Dimensional Monte Carlo Model for Phosphorus Implants into (100) Single-Crystal Silicon / Myung-Sik Son and Ho-Jung Hwang.".
- catalog title "Semiconductor process and device performance modelling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A. / editors, Scott T. Dunham, Jeffrey S. Nelson.".
- catalog type "Boston (Mass., 1997) swd".
- catalog type "Conference proceedings. fast".
- catalog type "text".