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• catalog abstract "An introduction to the physical operation of semiconductor devices, this text includes sufficient background physics to be understood by the first-time student. It includes a CD ROM with BIPOLE 3, a program allows the study of diodes, BJTs & MOSFETs.".
• catalog contributor b11056124.
• catalog created "c1999.".
• catalog date "1999".
• catalog date "c1999.".
• catalog dateCopyrighted "c1999.".
• catalog description "An introduction to the physical operation of semiconductor devices, this text includes sufficient background physics to be understood by the first-time student. It includes a CD ROM with BIPOLE 3, a program allows the study of diodes, BJTs & MOSFETs.".
• catalog description "Ch. 1. Overview -- Ch. 2. Material Properties and Basic P-N Junction Relations -- Ch. 3. P-N Junction Diodes -- Ch. 4. Bipolar Junction Transistors -- Ch. 5. MOS Field-Effect Transistors -- Ch. 6. Junction Field-Effect Transistors -- Ch. 7. Overview of Special-Purpose Semiconductor Devices -- Ch. 8. Silicon Chip Technology and Fabrication Techniques -- App. A. The Bohr Model of the Hydrogen atom -- App. B. The Schrodinger Wave Equation -- App. C. Electron in a Square Potential Well with Infinite Sides -- App. D. Splitting of Energy Levels -- App. E. The Fermi Probability Distribution -- App. F. Density of States and Free-Electron Distribution Versus Energy -- App. G. The Einstein Relation -- App. H. Minority Carrier Diffusion Current and Terminal Current -- App. I. The Wide-Base Diode Derivation -- App. J. The NN[superscript +] Junction and the P[superscript +]NN[superscript +] Diode -- App. K. Space-Charge Recombination Current -- App. L. Maximum Oscillation Frequency of the BJT -- App. M. ECL Propagation Delay Time -- App. N. Noise in Semiconductor Devices -- App. O. The BJT Gummel Integral -- App. P. MOS Inversion-Layer Charge as a Function of Surface Potential -- App. Q. Student BIPOLE on CD-ROM -- App. R. Some Useful Physical Constants -- App. S. List of Important Symbols.".
• catalog description "Includes bibliographical references and index.".
• catalog extent "xviii, 290 p. ;".
• catalog identifier "0195114779 (cloth)".
• catalog isPartOf "Oxford series in electrical and computer engineering".
• catalog issued "1999".
• catalog issued "c1999.".
• catalog language "eng".
• catalog publisher "New York : Oxford University Press,".
• catalog subject "621.3815/2 21".
• catalog subject "QC611 .R86 1998".
• catalog subject "Semiconductors.".
• catalog tableOfContents "Ch. 1. Overview -- Ch. 2. Material Properties and Basic P-N Junction Relations -- Ch. 3. P-N Junction Diodes -- Ch. 4. Bipolar Junction Transistors -- Ch. 5. MOS Field-Effect Transistors -- Ch. 6. Junction Field-Effect Transistors -- Ch. 7. Overview of Special-Purpose Semiconductor Devices -- Ch. 8. Silicon Chip Technology and Fabrication Techniques -- App. A. The Bohr Model of the Hydrogen atom -- App. B. The Schrodinger Wave Equation -- App. C. Electron in a Square Potential Well with Infinite Sides -- App. D. Splitting of Energy Levels -- App. E. The Fermi Probability Distribution -- App. F. Density of States and Free-Electron Distribution Versus Energy -- App. G. The Einstein Relation -- App. H. Minority Carrier Diffusion Current and Terminal Current -- App. I. The Wide-Base Diode Derivation -- App. J. The NN[superscript +] Junction and the P[superscript +]NN[superscript +] Diode -- App. K. Space-Charge Recombination Current -- App. L. Maximum Oscillation Frequency of the BJT -- App. M. ECL Propagation Delay Time -- App. N. Noise in Semiconductor Devices -- App. O. The BJT Gummel Integral -- App. P. MOS Inversion-Layer Charge as a Function of Surface Potential -- App. Q. Student BIPOLE on CD-ROM -- App. R. Some Useful Physical Constants -- App. S. List of Important Symbols.".
• catalog title "An introduction to the physics of semiconductor devices / David J. Roulston.".
• catalog type "CD-ROMs local".
• catalog type "text".