Harvard |

Harvard

Matches in Harvard for { <http://id.lib.harvard.edu/aleph/008311707/catalog> ?p ?o. }

Showing items 1 to 40 of 40 with 100 items per page.

catalog alternative "Chemical-mechanical polishing".
catalog contributor b11567871.
catalog created "c2000.".
catalog date "2000".
catalog date "c2000.".
catalog dateCopyrighted "c2000.".
catalog description "A Novel Retaining Ring in Advanced Polishing Head Design for Significantly Improved CMP Performance / T.H. Osterheld, S. Zuniga, S. Huey, P. McKeever, C. Garretson, B. Bonner, D. Bennett, R.R. Jin 63 -- CMP Fundamentals and Challenges / M.R. Oliver 73 -- Part III Metal Polishing--W and Al -- Development of a Robust KIO[subscript 3] Tungsten CMP Process / A.H. Liu, R. Solis, J. Givens 83 -- XPS and Electrochemical Studies on Tungsten-Oxidizer Interaction in Chemical-Mechanical Polishing / D. Tamboli, S. Seal, V. Desai 89 -- Tribological Experiments Applied to Tungsten Chemical-Mechanical Polishing / M. Bielmann, U. Mahajan, R.K. Singh, P. Agarwal, S. Mischler, E. Rosset, D. Landolt 97 -- Effect of Particle Size During Tungsten Chemical-Mechanical Polishing / M. Bielmann, U. Mahajan, R.K. Singh 103 -- Tungsten Chemical-Mechanical Polishing Endpoint Detection / L. Sue, J. Lutzen, S. Gonzales, F. Wertsching, R. Golzarian 109 --".
catalog description "Characterization of Slurry System and Suppression of Oxide Erosion in Aluminum CMP (Chemical-Mechanical Planarization) / L. Zhong, J. Yang, K. Holland, J. Grillaert, K. Devriendt, N. Heylen, M. Meuris 115 -- Part IV Copper Polishing and Related Issues -- Role of Film Hardness on the Polish Rates of Metal Thin Films / S. Ramarajan, Y. Li, M. Hariharaputhiran, Y.S. Her, S.V. Babu 123 -- Mechanism of Cu Removal During CMP in H[subscript 2]O[subscript 2]-Glycine Based Slurries / M. Hariharaputhiran, S. Ramarajan, Y. Li, S.V. Babu 129 -- Surfactant Based Alumina Slurries for Copper CMP / A.K. Babel, R.A. Mackay 135 -- Impact of Low-Temperature Anneals of Electroplated Copper Films on Copper CMP Removal Rates / K. Smekalin, Q-T. Jiang 143 -- Modified Preston Equation--Revisited / S. Ramarajan, S.V. Babu 149 -- An Exploration of the Copper CMP Removal Mechanism / P. Renteln, T. Ninh 155 --".
catalog description "Determination of the Planarization Distance for Copper CMP Process / S. Hymes, K. Smekalin, T. Brown, H. Yeung, M. Joffe, M. Banet, T. Park, T. Tugbawa, D. Boning, J. Nguyen, T. West, W. Sands 211 -- On the Pattern Dependency and Substrate Effects During Chemical-Mechanical- Planarization for ULSI Manufacturing / W-T. Tseng, J.J-L. Niu, C-F. Lin 217 -- STI Pattern Density Characterization for the System on a Chip / J. Xie, K. Rafftesaeth, S-F. Huang, J. Jensen, R. Nagahara, P. Parimi, B. Ho 223 -- Film Thickness Monitor for CMP Processing / N. Kondo, T. Hayashi, H. Atsuta, M. Horie, M. Yoshida, N. Kimura, M. Tsujimura, H. Yano, K. Okumura 233 -- Part VI Particle Adhesion and Post-Polish Cleaning -- Post-CMP Megasonic Cleaning Using Dilute SCI Solution / A.A. Busnaina, N. Moumen, J. Piboontum, M. Guarrera 247 -- Mechanism of a New Post CMP Cleaning for Trench Isolation Process /".
catalog description "Electrochemical Behavior of Copper in Tetramethyl Ammonium Hydroxide Based Solutions / W.H. Huang, S. Raghavan, Y. Fang, L. Zhang 161 -- Process Control Challenges and Solutions: TEOS, W, and Cu CMP / J. Mendonca, C. Dang, S. Selinidis, M. Angyal, B. Boeck, R. Islam, C. Pettinato, P. Grudowski, J. Cope, B. Smith, V. Kolagunta 167 -- Electrical Characterization of Slurry Particles and Their Interactions With Wafer Surfaces / J-G. Park, S-H. Lee, H-G. Kim, H-D. Jeong, D-K. Moon 173 -- Part V CMP Modeling and Fluid Flow -- Hydrodynamics of a Chemical-Mechanical Planarization Process / I-S. Sohn, B. Moudgil, R. Singh, C-W. Park 181 -- Interfacial Pressure Measurements at Chemical-Mechanical Polishing Interfaces / L. Shan, S. Danyluk, J. Levert 187 -- Pattern Dependent Modeling for CMP Optimization and Control / D. Boning, B. Lee, C. Oji, D. Ouma, T. Park, T. Smith, T. Tugbawa 197 --".
catalog description "Includes bibliographical references and index.".
catalog description "N. Miyashita, Y. Mase, J. Takayasu, Y. Minami, M. Kodera, M. Abe, T. Izumi 252 -- PCA Characterization of Residual Subsurface Damage After Silicon Wafer Mirror Polishing and its Removal / Y. Ogita, K. Kobayashi, H. Daio 261 -- Use of Dilute HF With Controlled Oxygen for Post Cu CMP Cleans / K.K. Christenson, C. Pizetti 267 -- Scanning Force Microscope Studies of Detachment of Nanometer Adhering Particulates / J.T. Dickinson, R.F. Hariadi, L. Scudiero, S.C. Langford 273.".
catalog description "Part I Overview and Oxide Polishing -- Directions in the Chemical-Mechanical Planarization Research / S.P. Murarka 3 -- Influence of pH and Temperature on Polish Rates and Selectivity of Silicon Dioxide and Nitride Films / W.G. America, R. Srinivasan, S.V. Babu 13 -- Study of Oxide Planarization Using a Grindstone / H. Yano, K. Okumura, F. Shoji, Y. Wada, H. Hiyama, N. Kimura 19 -- Abrasive Effects in Oxide Chemical-Mechanical Polishing / U. Mahajan, M. Bielmann, R.K. Singh 27 -- A Study of the Planarity by STI CMP Erosion Modeling / K.H. Kim, S.R. Hah, J.H. Han, C.K. Hong, U.I. Chung, G.W. Kang 33 -- Part II Pads and Related Issues -- Modeling the Influence of Pad Bending on the Planarization Performance During CMP / J. Grillaert, M. Meuris, E. Vrancken, N. Heylen, K. Devriendt, W. Fyen, M. Heyns 45 -- Structured Abrasive CMP: Length Scales, Subpads, and Planarization / D.P. Goetz 51 --".
catalog extent "ix, 281 p. :".
catalog hasFormat "Chemical-mechanical polishing--fundamentals and challenges.".
catalog identifier "1558994734".
catalog isFormatOf "Chemical-mechanical polishing--fundamentals and challenges.".
catalog isPartOf "Materials Research Society symposia proceedings ; v. 566.".
catalog isPartOf "Materials Research Society symposium proceedings ; v. 566".
catalog issued "2000".
catalog issued "c2000.".
catalog language "eng".
catalog publisher "Warrendale, Pa. : Materials Research Society,".
catalog relation "Chemical-mechanical polishing--fundamentals and challenges.".
catalog subject "621.3815/2 21".
catalog subject "Chemical mechanical planarization Congresses.".
catalog subject "Electrolytic polishing Congresses.".
catalog subject "Grinding and polishing Congresses.".
catalog subject "TS654.5. C48 1999".
catalog subject "TS654.5. C48 2000".
catalog tableOfContents "A Novel Retaining Ring in Advanced Polishing Head Design for Significantly Improved CMP Performance / T.H. Osterheld, S. Zuniga, S. Huey, P. McKeever, C. Garretson, B. Bonner, D. Bennett, R.R. Jin 63 -- CMP Fundamentals and Challenges / M.R. Oliver 73 -- Part III Metal Polishing--W and Al -- Development of a Robust KIO[subscript 3] Tungsten CMP Process / A.H. Liu, R. Solis, J. Givens 83 -- XPS and Electrochemical Studies on Tungsten-Oxidizer Interaction in Chemical-Mechanical Polishing / D. Tamboli, S. Seal, V. Desai 89 -- Tribological Experiments Applied to Tungsten Chemical-Mechanical Polishing / M. Bielmann, U. Mahajan, R.K. Singh, P. Agarwal, S. Mischler, E. Rosset, D. Landolt 97 -- Effect of Particle Size During Tungsten Chemical-Mechanical Polishing / M. Bielmann, U. Mahajan, R.K. Singh 103 -- Tungsten Chemical-Mechanical Polishing Endpoint Detection / L. Sue, J. Lutzen, S. Gonzales, F. Wertsching, R. Golzarian 109 --".
catalog tableOfContents "Characterization of Slurry System and Suppression of Oxide Erosion in Aluminum CMP (Chemical-Mechanical Planarization) / L. Zhong, J. Yang, K. Holland, J. Grillaert, K. Devriendt, N. Heylen, M. Meuris 115 -- Part IV Copper Polishing and Related Issues -- Role of Film Hardness on the Polish Rates of Metal Thin Films / S. Ramarajan, Y. Li, M. Hariharaputhiran, Y.S. Her, S.V. Babu 123 -- Mechanism of Cu Removal During CMP in H[subscript 2]O[subscript 2]-Glycine Based Slurries / M. Hariharaputhiran, S. Ramarajan, Y. Li, S.V. Babu 129 -- Surfactant Based Alumina Slurries for Copper CMP / A.K. Babel, R.A. Mackay 135 -- Impact of Low-Temperature Anneals of Electroplated Copper Films on Copper CMP Removal Rates / K. Smekalin, Q-T. Jiang 143 -- Modified Preston Equation--Revisited / S. Ramarajan, S.V. Babu 149 -- An Exploration of the Copper CMP Removal Mechanism / P. Renteln, T. Ninh 155 --".
catalog tableOfContents "Determination of the Planarization Distance for Copper CMP Process / S. Hymes, K. Smekalin, T. Brown, H. Yeung, M. Joffe, M. Banet, T. Park, T. Tugbawa, D. Boning, J. Nguyen, T. West, W. Sands 211 -- On the Pattern Dependency and Substrate Effects During Chemical-Mechanical- Planarization for ULSI Manufacturing / W-T. Tseng, J.J-L. Niu, C-F. Lin 217 -- STI Pattern Density Characterization for the System on a Chip / J. Xie, K. Rafftesaeth, S-F. Huang, J. Jensen, R. Nagahara, P. Parimi, B. Ho 223 -- Film Thickness Monitor for CMP Processing / N. Kondo, T. Hayashi, H. Atsuta, M. Horie, M. Yoshida, N. Kimura, M. Tsujimura, H. Yano, K. Okumura 233 -- Part VI Particle Adhesion and Post-Polish Cleaning -- Post-CMP Megasonic Cleaning Using Dilute SCI Solution / A.A. Busnaina, N. Moumen, J. Piboontum, M. Guarrera 247 -- Mechanism of a New Post CMP Cleaning for Trench Isolation Process /".
catalog tableOfContents "Electrochemical Behavior of Copper in Tetramethyl Ammonium Hydroxide Based Solutions / W.H. Huang, S. Raghavan, Y. Fang, L. Zhang 161 -- Process Control Challenges and Solutions: TEOS, W, and Cu CMP / J. Mendonca, C. Dang, S. Selinidis, M. Angyal, B. Boeck, R. Islam, C. Pettinato, P. Grudowski, J. Cope, B. Smith, V. Kolagunta 167 -- Electrical Characterization of Slurry Particles and Their Interactions With Wafer Surfaces / J-G. Park, S-H. Lee, H-G. Kim, H-D. Jeong, D-K. Moon 173 -- Part V CMP Modeling and Fluid Flow -- Hydrodynamics of a Chemical-Mechanical Planarization Process / I-S. Sohn, B. Moudgil, R. Singh, C-W. Park 181 -- Interfacial Pressure Measurements at Chemical-Mechanical Polishing Interfaces / L. Shan, S. Danyluk, J. Levert 187 -- Pattern Dependent Modeling for CMP Optimization and Control / D. Boning, B. Lee, C. Oji, D. Ouma, T. Park, T. Smith, T. Tugbawa 197 --".
catalog tableOfContents "N. Miyashita, Y. Mase, J. Takayasu, Y. Minami, M. Kodera, M. Abe, T. Izumi 252 -- PCA Characterization of Residual Subsurface Damage After Silicon Wafer Mirror Polishing and its Removal / Y. Ogita, K. Kobayashi, H. Daio 261 -- Use of Dilute HF With Controlled Oxygen for Post Cu CMP Cleans / K.K. Christenson, C. Pizetti 267 -- Scanning Force Microscope Studies of Detachment of Nanometer Adhering Particulates / J.T. Dickinson, R.F. Hariadi, L. Scudiero, S.C. Langford 273.".
catalog tableOfContents "Part I Overview and Oxide Polishing -- Directions in the Chemical-Mechanical Planarization Research / S.P. Murarka 3 -- Influence of pH and Temperature on Polish Rates and Selectivity of Silicon Dioxide and Nitride Films / W.G. America, R. Srinivasan, S.V. Babu 13 -- Study of Oxide Planarization Using a Grindstone / H. Yano, K. Okumura, F. Shoji, Y. Wada, H. Hiyama, N. Kimura 19 -- Abrasive Effects in Oxide Chemical-Mechanical Polishing / U. Mahajan, M. Bielmann, R.K. Singh 27 -- A Study of the Planarity by STI CMP Erosion Modeling / K.H. Kim, S.R. Hah, J.H. Han, C.K. Hong, U.I. Chung, G.W. Kang 33 -- Part II Pads and Related Issues -- Modeling the Influence of Pad Bending on the Planarization Performance During CMP / J. Grillaert, M. Meuris, E. Vrancken, N. Heylen, K. Devriendt, W. Fyen, M. Heyns 45 -- Structured Abrasive CMP: Length Scales, Subpads, and Planarization / D.P. Goetz 51 --".
catalog title "Chemical-mechanical polishing".
catalog title "Chemical-mechanical polishing--fundamentals and changes : symposium held April 5-7, 1999, San Francisco, California, U.S.A. / editors, S.V. Babu ... [et al.].".
catalog type "Conference proceedings. fast".
catalog type "text".