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- catalog alternative "Infrared applications of semiconductors 3".
- catalog alternative "Infrared applications of semiconductors three".
- catalog contributor b11710066.
- catalog created "2000.".
- catalog date "2000".
- catalog date "2000.".
- catalog dateCopyrighted "2000.".
- catalog description "2.3-2.7[mu]m InGaAsSb/AlGaAsSb Broad-Contact and Single-Mode Ridge-Waveguide SCH-QW Diode Lasers Operating in CW Regime at Room Temperature / D. Garbuzov, H. Lee 41 -- Room Temperature CW Operation of GaInAsSb/AlGaAsSb Quantum Well Lasers Emitting in the 2.2 to 2.3[mu]m Wavelength Range / C. Mermelstein, S. Simanowski, M. Mayer, R. Kiefer, J. Schmitz, M. Walther, J. Wagner 53 -- Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications / R.M. Biefeld, J.D. Phillips 59 -- Compound Semiconductor Applications for Automotive Sensors / M.W. Pelczynski, J.J. Heremans, S. Schwed 65 -- Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12[mu]m Range / L. Burkle, F. Fuchs, R. Kiefer, W. Pletschen, R.E. Sah, J. Schmitz 77 -- Correlation Between GaInAsSb Surface Step Structure and Phase Separation / C.A. Wang 83 -- Advanced GaSb/InGaAsSb/AlGaAsSb 2-2.4[mu]m Photovoltaic Detectors /".
- catalog description "A. Wang, N.L. Edleman, J.R. Babcock, T.J. Marks, M.A. Lane, P.W. Brazis, C.R. Kannewurf 345 -- Development of Infrared Photosensitive Material Based on Polycrystalline PbS Films / C. Abarbanel, R. Shneck, Z. Dashevsky, S. Rotman 353 -- Nonlinear Optical Materials -- Development of Large High-Quality Chalcopyrite Single Crystals for Nonlinear Optical Applications / W. Ruderman, I. Zwieback 361 -- Native Defect Characterization in ZnGeP[subscript 2] / A. Hoffmann, H. Born, A. Naser, W. Gehlhoff, J. Maffetone, D. Perlov, W. Ruderman, I. Zwieback, N. Dietz, K.J. Bachmann 373 -- Photoinduced Changes in the Charge States of Native Donors and Acceptors in ZnGeP[subscript 2] / K.T. Stevens, S.D. Setzler, P.G. Schunemann, T.M. Pollak, N.C. Giles, L.E. Halliburton 379 -- Electronic Structure and Derived Linear and Nonlinear Optical Properties of Chalcopyrites / Walter R.L. Lambrecht, Sergey N. Rashkeev, Sukit Limpijumnong, Benjamin Segall 385 --".
- catalog description "Anisotropy of Optical and Electron Transport Properties of Atomic Ordering in CdGeAs[subscript 2] / B.H. Bairamov, N. Fernelius, G. Irmer, J. Monecke, I.K. Polushina, R. Pandey, V. Yu. Rud', Yu. V. Rud', P.G. Schunemann, M.C. Ohmer 397 -- Thermal Admittance Studies of Electron-Irradiated CdGeAs[subscript 2] / S.R. Smith, A.O. Evwaraye, M.C. Ohmer, P.J. Drevinsky, D.F. Bliss 403.".
- catalog description "Antimondie Related Materials and Devices -- Progress in Antimonide-Based Mid-IR Lasers / G.W. Turner, M.J. Manfra, H.K. Choi, A.K. Goyal, S.C. Buchter, S.D. Calawa, A. Sanchez, D.L. Spears 3 -- Pseudopotential Methods for Superlattices: Applications to Mid-Infrared Semiconductor Lasers / G.C. Dente, M.L. Tilton 11 -- InN[subscript x]Sb[subscript 1-x] Light Emitting Diodes Grown by MBE / A.D. Johnson, R.H. Bennett, J. Newey, G.J. Pryce, G.M. Williams, T.M. Burke, J.C. Jones, A.M. Keir 23 -- Electronic Structure Engineering of the Linewidth Enhancement Factor in Mid-Infrared Semiconductor Laser Active Regions / Michael E. Flatte, J.T. Olesberg, T.F. Boggess 29 -- Recent Progress of Mid-IR Type-II Interband Cascade Lasers / Chih-Hsiang Lin, W-Y. Hwang, S.V. Zaitsev, J. Um, C.H. Kuo, A. Delaney, Jun Zheng, S.J. Murry, A. Liu, H.Q. Le, Y. Mu, S.S. Pei 35 --".
- catalog description "B. Aslan, R. Turan, O. Nur, M. Karlsteen, M. Willander 235 -- Defects in CdTe-Based Photodetectors / V. Valdna 241 -- Infrared Photosensitivity Due to the Yb-Induced Defect States in Pb[subscript 1-x]Ge[subscript x]Te Alloys / E.P. Skipetrov, N.A. Chernova, E.A. Zvereva, E.I. Slyn'ko 247 -- Innovative Materials, Characterization and Devices -- Strained SiGe Materials for High Quantum Efficiency Photodiodes at [lambda] = 1.3 to 1.5[mu]m / L.M. Giovane, H-C. Luan, E.A. Fitzgerald, L.C. Kimerling 255 -- Photoconductive Properties of GaAs[subscript 1-x]N[subscript x] Double Heterostructures as a Function of Excitation Wavelength / R.K. Ahrenkiel, A. Mascarenhas, S.W. Johnston, Y. Zhang, D.J. Friedman, S.M. Vernon 265 -- Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures / Q.X. Zhao, M. Willander 273 -- Germanium Photodetectors for Silicon Microphotonics by Direct Epitaxy on Silicon /".
- catalog description "Hsin-Chiao Luan, Desmond R. Lim, Lorenzo Colace, Gianlorezo Masini, Gaetano Assanto, Kazumi Wada, Lionel C. Kimerling 279 -- Investigation of New Geometries for High Duty Cycle Far-Infrared p-Type Germanium Lasers / Danielle R. Chamberlin, Erik Bruendermann, Eugene E. Haller 285 -- Electronic Bandgap and Refractive Index Dispersion of Single Crystalline Epitaxial ZnGeN[subscript 2] / L.D. Zhu, P.E. Norris, L.O. Bouthillette 291 -- Bandgap Variation and Miscibility Gaps of Thallium-Based Pseudo-Binary Alloys / A-B. Chen, J. Piao 297 -- Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition / R.M. Biefeld, J.D. Phillips, S.R. Kurtz 303 -- Emissivity Compensated Pyrometry of the Substrate Surface During MOVPE Growth of In[subscript x]Ga[subscript 1-x]As[subscript 1-y]P[subscript y]/InP Materials in Rotating Disc Reactors / J. Ramer, B. Patel, A. Patel, V. Boguslavskiy, A. Gurary 309 --".
- catalog description "I. Ivanchik, D. Khokhlov, J. Pipher, N. Raines, D. Watson 169 -- Tuned Infrared Emission From Lithographically-Defined Silicon Surface Structures / James T. Daly, Edward A. Johnson, William A. Stevenson, Anton C. Greenwald, John A.t Wollam, Thomas George, Eric W. Jones 175 -- IV-VI Compound Semiconductor Mid-Infrared Vertical Cavity Surface Emitting Lasers Grown by MBE / Z. Shi, G. Xu, P.J. McCann, X.M. Fang, N. Dai, W.W. Bewley, C.L. Felix, I. Vurgaftman, J.R. Meyer 181 -- Infrared Photodetectors -- Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment / F. Szmulowicz, A. Shen, H.C. Liu, G.J. Brown, Z.R. Wasilewski, M. Buchanan 187 -- Low Frequency Noise and Random Telegraph Signal in a Multiple Quantum Well Infrared Photodetector / L. Kore, G. Bosman 199 -- Auger Suppression in and Noise Performance of "Hot" HgCdTe IR Detectors / F. Benjaminsen, A.D. van Rheenen, X-Y. Chen 205 --".
- catalog description "Includes bibliographical references and index.".
- catalog description "Infrared-Photovoltaic Responses of Ion-Beam Synthesized [beta]-FeSi[subscript 2]/n-Si Heterojunctions / Yoshihito Maeda, Kenji Umezawa, Kiyoshi Miyake, Kenya Ohashi 315 -- Si[subscript 1-x]Ge[subscript x] Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus / S. Kato, T. Horikoshi, T. Ohkubo, T. Iida, Y. Takano 321 -- Positive and Negative Photoconductivity in Lead Telluride Doped With Gallium Epitaxial Films / B.A. Akimov, V.A. Bogoyavlenskiy, L.I. Ryabova, V.N. Vasil'kov 327 -- Impurity-Induced Defect States in Pb[subscript 1-x]Ge[subscript x]Te Alloys Doped With Gallium / E.P. Skipetrov, E.A. Zvereva, V.V. Belousov, L.A. Skipetrova 333 -- PbEuTe/PbTe Multi-Quantum Wells: Structural and Optical Properties / E. Abramof, P.H.O. Rappl, A.Y. Ueta, P. Motisuke, S.O. Ferreira 339 -- Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films /".
- catalog description "Novel Diffraction Pattern for Optical Coupling in QWIP / Prafulla Masalkar, Hironori Nishino, Yusuke Matsukura, Hitoshi Tanaka, Kousaku Yamamoto, Yoshihiro Miyamoto, Toshio Fujii 211 -- Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al[subscript 0.3]Ga[subscript 0.7]As Multiple Quantum Wells / H.S. Gingrich, C. Morath, M.O. Manasreh, P. Ballet, J.B. Smathers, G.J. Salamo, C. Jagadish 217 -- Mechanisms of Intersubband Transition in n-Type III-V Quantum Well Superlattice and Improvement on Absorption for TE Polarized Field / C.W. Cheah, G. Karunasiri, L.S. Tan 223 -- High-Resolution X-ray Diffraction Analysis of p-Type Strained InGaAs/AlGaAs Multiple Quantum Well Structures / W. Shi, D.H. Zhang, T. Osotchan, P.H. Zhang, S.F. Yoon, S. Swaminathan 229 -- Effect of Layer Relaxation on the Internal Photoemission in Pt/Si[subscript 1-x]Ge[subscript x] Schottky Barrier Type Infrared Detectors /".
- catalog description "Progress in Monolithic Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation / Emil S. Koteles 129 -- AlGaAs/GaAs Distributed Feedback Quantum Cascade Lasers / W. Schrenk, N. Finger, S. Gianordoli, G. Strasser, E. Gornik 141 -- Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells / Seung-Woong Lee, Kazuhiko Hirakawa, Yozo Shimada 147 -- Time-Resolved Photoluminescence Studies of In[subscript x]Ga[subscript 1-x]As[subscript 1-y]N[subscript y] / M. Smith, R.A. Mair, J.Y. Lin, H.X. Jiang, E.D. Jones, A.A. Allerman, S.R. Kurtz 153 -- External Cavity Mid-Infrared Semiconductor Lasers / H.Q. Le, C-H. Lin, S.J. Murry, J. Zheng, S-S. Pei 159 -- Longest Wavelength OPO Pumped by a 1[mu]m Laser / K.L. Vodopyanov, J. Maffetone, I. Zwieback, W. Ruderman 165 -- Performance and Spectral Response of Far-Infrared Pb[subscript 1-x]Sn[subscript x]Te(In) Photodetectors /".
- catalog description "T.T. Piotrowski, A. Piotrowska, E. Kaminska, K. Golaszewska, E. Papis, M. Piskorski, W. Jung, J. Katcki, A. Kudla, J. Adamczewska, J. Piotrowski, Z. Nowak, Z. Orman, J. Pawluczyk 89 -- High-Temperature W Diode Lasers Emitting at 3.3[mu]m / L.J. Olafsen, W.W. Bewley, I. Vurgaftman, C.L. Felix, E.H. Aifer, D.W. Stokes, J.R. Meyer, H. Lee, R.J. Menna, R.U. Martinelli, D.Z. Garbuzov, M. Maiorov, J.C. Connolly, A.R. Sugg, G.H. Olsen 95 -- High-Power Mid-IR Interband Cascade Lasers Based on Type-II Heterostructures / Rui Q. Yang, J.D. Bruno, J.L. Bradshaw, J.T. Pham, D.E. Wortman 101 -- Type-II InAs/InGaSb Superlattices on Compliant GaAs Substrates / G.J. Brown, K. Mahalingam, A. Saxler, R. Linville, F. Szmulowicz, M.L. Seaford, D.H. Tomich, Chih-Hsiang Lin, C.H. Kuo, W.Y. Hwang 107 -- Innovative Devices -- DC to 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers / Abhay M. Joshi 115 --".
- catalog extent "xv, 535 p. :".
- catalog hasFormat "Infrared applications of semiconductors III.".
- catalog identifier "1558995153".
- catalog isFormatOf "Infrared applications of semiconductors III.".
- catalog isPartOf "Materials Research Society symposia proceedings ; v. 607.".
- catalog isPartOf "Materials Research Society symposium proceedings ; v. 607".
- catalog issued "2000".
- catalog issued "2000.".
- catalog language "eng".
- catalog publisher "Warrendale, Pa. : Materials Research Society,".
- catalog relation "Infrared applications of semiconductors III.".
- catalog subject "621.36/2 21".
- catalog subject "Infrared detectors Materials Congresses.".
- catalog subject "Infrared technology Materials Congresses.".
- catalog subject "Quantum wells Congresses.".
- catalog subject "Semiconductors Congresses.".
- catalog subject "Superlattices as materials Congresses.".
- catalog subject "TA1570 .I524 2000".
- catalog tableOfContents "2.3-2.7[mu]m InGaAsSb/AlGaAsSb Broad-Contact and Single-Mode Ridge-Waveguide SCH-QW Diode Lasers Operating in CW Regime at Room Temperature / D. Garbuzov, H. Lee 41 -- Room Temperature CW Operation of GaInAsSb/AlGaAsSb Quantum Well Lasers Emitting in the 2.2 to 2.3[mu]m Wavelength Range / C. Mermelstein, S. Simanowski, M. Mayer, R. Kiefer, J. Schmitz, M. Walther, J. Wagner 53 -- Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications / R.M. Biefeld, J.D. Phillips 59 -- Compound Semiconductor Applications for Automotive Sensors / M.W. Pelczynski, J.J. Heremans, S. Schwed 65 -- Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12[mu]m Range / L. Burkle, F. Fuchs, R. Kiefer, W. Pletschen, R.E. Sah, J. Schmitz 77 -- Correlation Between GaInAsSb Surface Step Structure and Phase Separation / C.A. Wang 83 -- Advanced GaSb/InGaAsSb/AlGaAsSb 2-2.4[mu]m Photovoltaic Detectors /".
- catalog tableOfContents "A. Wang, N.L. Edleman, J.R. Babcock, T.J. Marks, M.A. Lane, P.W. Brazis, C.R. Kannewurf 345 -- Development of Infrared Photosensitive Material Based on Polycrystalline PbS Films / C. Abarbanel, R. Shneck, Z. Dashevsky, S. Rotman 353 -- Nonlinear Optical Materials -- Development of Large High-Quality Chalcopyrite Single Crystals for Nonlinear Optical Applications / W. Ruderman, I. Zwieback 361 -- Native Defect Characterization in ZnGeP[subscript 2] / A. Hoffmann, H. Born, A. Naser, W. Gehlhoff, J. Maffetone, D. Perlov, W. Ruderman, I. Zwieback, N. Dietz, K.J. Bachmann 373 -- Photoinduced Changes in the Charge States of Native Donors and Acceptors in ZnGeP[subscript 2] / K.T. Stevens, S.D. Setzler, P.G. Schunemann, T.M. Pollak, N.C. Giles, L.E. Halliburton 379 -- Electronic Structure and Derived Linear and Nonlinear Optical Properties of Chalcopyrites / Walter R.L. Lambrecht, Sergey N. Rashkeev, Sukit Limpijumnong, Benjamin Segall 385 --".
- catalog tableOfContents "Anisotropy of Optical and Electron Transport Properties of Atomic Ordering in CdGeAs[subscript 2] / B.H. Bairamov, N. Fernelius, G. Irmer, J. Monecke, I.K. Polushina, R. Pandey, V. Yu. Rud', Yu. V. Rud', P.G. Schunemann, M.C. Ohmer 397 -- Thermal Admittance Studies of Electron-Irradiated CdGeAs[subscript 2] / S.R. Smith, A.O. Evwaraye, M.C. Ohmer, P.J. Drevinsky, D.F. Bliss 403.".
- catalog tableOfContents "Antimondie Related Materials and Devices -- Progress in Antimonide-Based Mid-IR Lasers / G.W. Turner, M.J. Manfra, H.K. Choi, A.K. Goyal, S.C. Buchter, S.D. Calawa, A. Sanchez, D.L. Spears 3 -- Pseudopotential Methods for Superlattices: Applications to Mid-Infrared Semiconductor Lasers / G.C. Dente, M.L. Tilton 11 -- InN[subscript x]Sb[subscript 1-x] Light Emitting Diodes Grown by MBE / A.D. Johnson, R.H. Bennett, J. Newey, G.J. Pryce, G.M. Williams, T.M. Burke, J.C. Jones, A.M. Keir 23 -- Electronic Structure Engineering of the Linewidth Enhancement Factor in Mid-Infrared Semiconductor Laser Active Regions / Michael E. Flatte, J.T. Olesberg, T.F. Boggess 29 -- Recent Progress of Mid-IR Type-II Interband Cascade Lasers / Chih-Hsiang Lin, W-Y. Hwang, S.V. Zaitsev, J. Um, C.H. Kuo, A. Delaney, Jun Zheng, S.J. Murry, A. Liu, H.Q. Le, Y. Mu, S.S. Pei 35 --".
- catalog tableOfContents "B. Aslan, R. Turan, O. Nur, M. Karlsteen, M. Willander 235 -- Defects in CdTe-Based Photodetectors / V. Valdna 241 -- Infrared Photosensitivity Due to the Yb-Induced Defect States in Pb[subscript 1-x]Ge[subscript x]Te Alloys / E.P. Skipetrov, N.A. Chernova, E.A. Zvereva, E.I. Slyn'ko 247 -- Innovative Materials, Characterization and Devices -- Strained SiGe Materials for High Quantum Efficiency Photodiodes at [lambda] = 1.3 to 1.5[mu]m / L.M. Giovane, H-C. Luan, E.A. Fitzgerald, L.C. Kimerling 255 -- Photoconductive Properties of GaAs[subscript 1-x]N[subscript x] Double Heterostructures as a Function of Excitation Wavelength / R.K. Ahrenkiel, A. Mascarenhas, S.W. Johnston, Y. Zhang, D.J. Friedman, S.M. Vernon 265 -- Electronic Structures of Shallow Acceptors Confined in Si/SiGe Quantum Well Structures / Q.X. Zhao, M. Willander 273 -- Germanium Photodetectors for Silicon Microphotonics by Direct Epitaxy on Silicon /".
- catalog tableOfContents "Hsin-Chiao Luan, Desmond R. Lim, Lorenzo Colace, Gianlorezo Masini, Gaetano Assanto, Kazumi Wada, Lionel C. Kimerling 279 -- Investigation of New Geometries for High Duty Cycle Far-Infrared p-Type Germanium Lasers / Danielle R. Chamberlin, Erik Bruendermann, Eugene E. Haller 285 -- Electronic Bandgap and Refractive Index Dispersion of Single Crystalline Epitaxial ZnGeN[subscript 2] / L.D. Zhu, P.E. Norris, L.O. Bouthillette 291 -- Bandgap Variation and Miscibility Gaps of Thallium-Based Pseudo-Binary Alloys / A-B. Chen, J. Piao 297 -- Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition / R.M. Biefeld, J.D. Phillips, S.R. Kurtz 303 -- Emissivity Compensated Pyrometry of the Substrate Surface During MOVPE Growth of In[subscript x]Ga[subscript 1-x]As[subscript 1-y]P[subscript y]/InP Materials in Rotating Disc Reactors / J. Ramer, B. Patel, A. Patel, V. Boguslavskiy, A. Gurary 309 --".
- catalog tableOfContents "I. Ivanchik, D. Khokhlov, J. Pipher, N. Raines, D. Watson 169 -- Tuned Infrared Emission From Lithographically-Defined Silicon Surface Structures / James T. Daly, Edward A. Johnson, William A. Stevenson, Anton C. Greenwald, John A.t Wollam, Thomas George, Eric W. Jones 175 -- IV-VI Compound Semiconductor Mid-Infrared Vertical Cavity Surface Emitting Lasers Grown by MBE / Z. Shi, G. Xu, P.J. McCann, X.M. Fang, N. Dai, W.W. Bewley, C.L. Felix, I. Vurgaftman, J.R. Meyer 181 -- Infrared Photodetectors -- Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment / F. Szmulowicz, A. Shen, H.C. Liu, G.J. Brown, Z.R. Wasilewski, M. Buchanan 187 -- Low Frequency Noise and Random Telegraph Signal in a Multiple Quantum Well Infrared Photodetector / L. Kore, G. Bosman 199 -- Auger Suppression in and Noise Performance of "Hot" HgCdTe IR Detectors / F. Benjaminsen, A.D. van Rheenen, X-Y. Chen 205 --".
- catalog tableOfContents "Infrared-Photovoltaic Responses of Ion-Beam Synthesized [beta]-FeSi[subscript 2]/n-Si Heterojunctions / Yoshihito Maeda, Kenji Umezawa, Kiyoshi Miyake, Kenya Ohashi 315 -- Si[subscript 1-x]Ge[subscript x] Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus / S. Kato, T. Horikoshi, T. Ohkubo, T. Iida, Y. Takano 321 -- Positive and Negative Photoconductivity in Lead Telluride Doped With Gallium Epitaxial Films / B.A. Akimov, V.A. Bogoyavlenskiy, L.I. Ryabova, V.N. Vasil'kov 327 -- Impurity-Induced Defect States in Pb[subscript 1-x]Ge[subscript x]Te Alloys Doped With Gallium / E.P. Skipetrov, E.A. Zvereva, V.V. Belousov, L.A. Skipetrova 333 -- PbEuTe/PbTe Multi-Quantum Wells: Structural and Optical Properties / E. Abramof, P.H.O. Rappl, A.Y. Ueta, P. Motisuke, S.O. Ferreira 339 -- Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films /".
- catalog tableOfContents "Novel Diffraction Pattern for Optical Coupling in QWIP / Prafulla Masalkar, Hironori Nishino, Yusuke Matsukura, Hitoshi Tanaka, Kousaku Yamamoto, Yoshihiro Miyamoto, Toshio Fujii 211 -- Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al[subscript 0.3]Ga[subscript 0.7]As Multiple Quantum Wells / H.S. Gingrich, C. Morath, M.O. Manasreh, P. Ballet, J.B. Smathers, G.J. Salamo, C. Jagadish 217 -- Mechanisms of Intersubband Transition in n-Type III-V Quantum Well Superlattice and Improvement on Absorption for TE Polarized Field / C.W. Cheah, G. Karunasiri, L.S. Tan 223 -- High-Resolution X-ray Diffraction Analysis of p-Type Strained InGaAs/AlGaAs Multiple Quantum Well Structures / W. Shi, D.H. Zhang, T. Osotchan, P.H. Zhang, S.F. Yoon, S. Swaminathan 229 -- Effect of Layer Relaxation on the Internal Photoemission in Pt/Si[subscript 1-x]Ge[subscript x] Schottky Barrier Type Infrared Detectors /".
- catalog tableOfContents "Progress in Monolithic Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation / Emil S. Koteles 129 -- AlGaAs/GaAs Distributed Feedback Quantum Cascade Lasers / W. Schrenk, N. Finger, S. Gianordoli, G. Strasser, E. Gornik 141 -- Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells / Seung-Woong Lee, Kazuhiko Hirakawa, Yozo Shimada 147 -- Time-Resolved Photoluminescence Studies of In[subscript x]Ga[subscript 1-x]As[subscript 1-y]N[subscript y] / M. Smith, R.A. Mair, J.Y. Lin, H.X. Jiang, E.D. Jones, A.A. Allerman, S.R. Kurtz 153 -- External Cavity Mid-Infrared Semiconductor Lasers / H.Q. Le, C-H. Lin, S.J. Murry, J. Zheng, S-S. Pei 159 -- Longest Wavelength OPO Pumped by a 1[mu]m Laser / K.L. Vodopyanov, J. Maffetone, I. Zwieback, W. Ruderman 165 -- Performance and Spectral Response of Far-Infrared Pb[subscript 1-x]Sn[subscript x]Te(In) Photodetectors /".
- catalog tableOfContents "T.T. Piotrowski, A. Piotrowska, E. Kaminska, K. Golaszewska, E. Papis, M. Piskorski, W. Jung, J. Katcki, A. Kudla, J. Adamczewska, J. Piotrowski, Z. Nowak, Z. Orman, J. Pawluczyk 89 -- High-Temperature W Diode Lasers Emitting at 3.3[mu]m / L.J. Olafsen, W.W. Bewley, I. Vurgaftman, C.L. Felix, E.H. Aifer, D.W. Stokes, J.R. Meyer, H. Lee, R.J. Menna, R.U. Martinelli, D.Z. Garbuzov, M. Maiorov, J.C. Connolly, A.R. Sugg, G.H. Olsen 95 -- High-Power Mid-IR Interband Cascade Lasers Based on Type-II Heterostructures / Rui Q. Yang, J.D. Bruno, J.L. Bradshaw, J.T. Pham, D.E. Wortman 101 -- Type-II InAs/InGaSb Superlattices on Compliant GaAs Substrates / G.J. Brown, K. Mahalingam, A. Saxler, R. Linville, F. Szmulowicz, M.L. Seaford, D.H. Tomich, Chih-Hsiang Lin, C.H. Kuo, W.Y. Hwang 107 -- Innovative Devices -- DC to 65 GHz Wide Bandwidth InGaAs Photodiodes and Photoreceivers / Abhay M. Joshi 115 --".
- catalog title "Infrared applications of semiconductors 3".
- catalog title "Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A. / editors, Omar Manasreh ... [et al.].".
- catalog title "Infrared applications of semiconductors three".
- catalog type "Boston (Mass., 1999) swd".
- catalog type "Conference proceedings. fast".
- catalog type "text".