Harvard |

Harvard

Matches in Harvard for { <http://id.lib.harvard.edu/aleph/008503288/catalog> ?p ?o. }

Showing items 1 to 42 of 42 with 100 items per page.

catalog contributor b11880655.
catalog created "2000.".
catalog date "2000".
catalog date "2000.".
catalog dateCopyrighted "2000.".
catalog description "Correlation Between Development of Leakage Current and Hydrogen Ionization in Ultrathin Silicon Dioxide Layers / V. V. Afanas'ev and A. Stesmans -- From Radiation Induced Leakage Current to Soft Breakdown in Irradiated MOS Devices With Ultrathin Gate Oxide / M. Ceschia, A. Paccagnella and A. Cester / [et al.] -- Low-Temperature Direct-Oxidation of Si Using Activated Oxygen Generated by Tungsten Catalytic Reaction / Manabu Kudo, Akira Izumi and Hideki Matsumura -- Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides / Sanjit Singh Dang and Christos G. Takoudis -- Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride / L. C. Chen, C. T. Wu and C.-Y. Wen / [et al.] -- Atomic-Scale Structure of the Si-SiO[subscript 2] and SiC-SiO[subscript 2] Interfaces and the Origin of Their Contrasting Properties / Ryszard Buczko, Stephen J. Pennycook and Sokrates T. Pantelides -- ".
catalog description "Dielectric Properties of Bi[subscript 2]Ti[subscript 2]O[subscript 7] Thin Films With (111) Orientation / Zhuo Wang, J. Huang and S. W. Wang / [et al.] -- Ultrathin NO/N[subscript 2]O Oxynitride Dielectric For Advanced Flash Memory Application: Single Wafer and Batch Technology / R. Zonca, B. Crivelli and M. L. Polignano / [et al.] -- Evaluation of the Degradation Dynamics of Thin Silicon Dioxide Films Using Model-Independent Procedures / R. Rodriguez, M. Nafria and E. Miranda / [et al.] -- Chemical and Structural Characterization of Ultrathin Dielectric Films Using AEM / J. H. J. Scott and E. S. Windsor -- Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrodinger and Poisson Equations / C. Raynaud, J. L. Autran and P. Masson / [et al.] -- ".
catalog description "Dynamics of Silicon Oxidation / A. M. Stoneham, M. A. Szymanski and A. L. Shluger -- Microscopic and Theoretical Investigations of the Si-SiO[subscript 2] Interface / G. Duscher, R. Buzcko and S. J. Pennycook / [et al.] -- Characterization of the P[subscript b1] Interface Defect in Thermal (100)Si/SiO[subscript 2] by Electron Spin Resonance: [superscript 29]Si Hyperfine Structure and Electrical Relevance / A. L. Stesmans -- Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100) / T. Hattori, H. Nohira and Y. Teramoto / [et al.] -- Defect States Due to Silicon Dangling Bonds at the Si(100)/SiO[subscript 2] Interface and the Passivation by Hydrogen Atoms / C. Kaneta, T. Yamasaki and T. Uchiyama / [et al.] -- Surface and Interfacial Topography of Oxides on Si(111) With Ultra-Low Atomic Step Density / Antonio C. Oliver and Jack M. Blakely -- ".
catalog description "Includes bibliographical references and indexes.".
catalog description "Initial Oxynitridation of a Si(001)-2xl Surface by NO / Noriyuki Miyata, Heiji Watanabe and Masakazu Ichikawa -- Low-Temperature Oxidation of Silicon(100) Substrates Using Atomic Oxygen / T. Ueno, S. Chikamura and F. Sakuraba / [et al.] -- Modification of Si(001)/SiO[subscript 2] Interfaces by Nitric Oxide Treatments: An Electron Paramagnetic Resonance Study / Jean-Louis Cantin and Hans Jurgen von Bardeleben -- Theoretical and Experimental Investigation of Ultrathin Oxynitrides / A. A. Demkov and R. Liu -- Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films / Y. Miura, S. Fujieda and E. Hasegawa -- Furnace Oxynitridation in Nitric Oxide of Thin Silicon Oxide: Atomic Transport Mechanisms and Interfacial Microstructure / I. Trimaille, J.-J. Ganem and L. G. Gosset / [et al.] -- Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques / J. L. Autran, P. Masson and G. Ghibaudo -- ".
catalog description "Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown / T. Nigam, R. Degraeve and G. Groeseneken / [et al.] -- Study of Stress-Induced Leakage Current in Thin Oxides Stressed by Corona Charging in Air: Relationship to GOI Defects / M. Wilson, J. Lagowski and A. Savtchou / [et al.] -- New Type of Superlattice: An Epitaxial Semiconductor-Atomic Superlattice, SAS / Raphael Tsu -- Quantum Confinement in Nanocrystalline Superlattices / G. F. Grom, P. M. Fauchet and L. Tsybeskov / [et al.] -- Multi-Million Atom Molecular-Dynamics Simulations of Stresses in Si(111)/Si[subscript 3]N[subscript 4] Nanopixels / Martina E. Bachlechner, Andrey Omeltchenko and Phillip Walsh / [et al.].".
catalog description "Mesoscopic Transport in Broken Down Ultrathin SiO[subscript 2] Films / E. Miranda, N. Sune and R. Rodriguez / [et al.] -- Roles of Primary Hot Hole and FN Electron Fluences in Gate Oxide Breakdown / M. F. Li, Y. D. He and S. G. Ma / [et al.] -- A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress / Hao Guan, Zhen Xu and Byung Jin Cho / [et al.] -- Investigation of Quasi-Breakdown Mechanism in Ultrathin Gate Oxides / Hao Guan, Y. D. He and M. F. Li / [et al.] -- Correlation Between Gate Induced Drain Leakage and Plasma Induced Interface Traps / Siguang Ma, Yaohui Zhang and M. F. Li / [et al.] -- Effects of Reverse Biased Floating Voltage at Source and Drain During High-Field Electron Injection on the Performance of NMOSFETS / R. K. Jarwal and D. Misra -- Characterization of Ta[subscript 2]O[subscript 5] Thin Films With Small Current Leakage for High Density DRAMS / N. Kanda, R. Furukawa and M. Ishibashi / [et al.] -- ".
catalog description "Photoluminescence Characterization of Defects in Thermal Oxide / Hiroyuki Nishikawa and James H. Stathis -- Impact of Temperature and Breakdown Statistics on Reliability Predictions for Ultrathin Oxides / G. Groeseneken, R. Degraeve and B. Kaczer / [et al.] -- Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique / A. Karamcheti, V. H. C. Watt and T. Y. Luo / [et al.] -- Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics from i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics / Gerry Lucovsky, Yider Wu and Yi-Mu Lee / [et al.] -- The Boundary Between Hard- and Soft-Breakdown in Ultrathin Silicon Dioxide Films / A. Toriumi and H. Satake -- A Study of Trap Profiles in Thin Silicon Dioxide Films at Dielectric Breakdown Using Percolation Model / S. Uno, A. Ishida and K. Okada / [et al.] -- ".
catalog description "Room Temperature Ultraviolet Photoluminescence from 800[degree]C Thermally Oxidized Si[subscript 1-x-y]Ge[subscript x]C[subscript y] Thin Films on Si(100) Substrate / X. M. Cheng, Y. D. Zheng and L. Zang / [et al.] -- An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide / W. H. Lai, M. F. Li and J. S. Pan / [et al.] -- Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks / Hanyang Yang, Hiro Niimi and Gerry Lucovsky -- Structure Analysis of CeO[subscript 2]/ZrO[subscript 2]/Si Multilayer Thin Films by HRTEM / Takanori Kiguchi, Naoki Wakiya and Kazuo Shinozaki / [et al.] -- Controlling the Concentration and Position of Nitrogen in Ultrathin Oxynitride Films Formed by Using Oxygen and Nitrogen Radicals / K. Watanabe, M. Togo and T. Tatsumi -- ".
catalog description "XPS Studies of the Si/SiO[subscript 2] Interface With Synchrotron Radiation / F. Rochet, F. Jolly and G. Dufour / [et al.] -- Precise Characterization of Ultrathin Nitride/Oxide Gate Dielectrics by Grazing X-ray Reflectance and Spectroscopic Ellipsometry / Pierre Boher, Jean Philippe Piel and Jean Louis Stehle -- Influence of Pre and Post Process Conditions on the Composition of Thin Si[subscript 3]N[subscript 4] Thin Films (3 nm) Studied by XPS and TOFSIMS / T. Conard, H. De Witte and W. Vandervorst / [et al.] -- Deposition and Characterization of Ultrathin Ta[subscript 2]O[subscript 5] Layers Deposited on Silicon From a Ta(OC[subscript 2]H[subscript 5])[subscript 5] Precursor / C. Chaneliere, J. L. Autran and J. P. Raynard / [et al.] -- Highly Reliable Thin Hafnium Oxide Gate Dielectric / Laegu Kang, Byoung-Hun Lee and Wen-Jie Qi / [et al.] -- Band Alignments of High-K Dielectrics on Si and Pt / J. Robertson, E. Riassi and J.-P. Maria / [et al.] -- ".
catalog extent "xi, 386 p. :".
catalog hasFormat "Structure and electronic properties of ultrathin dielectric films on silicon and related structures.".
catalog identifier "1558995005".
catalog isFormatOf "Structure and electronic properties of ultrathin dielectric films on silicon and related structures.".
catalog isPartOf "Materials Research Society symposia proceedings ; v. 592.".
catalog isPartOf "Materials research society symposium proceedings, 0272-9172 ; v. 592".
catalog issued "2000".
catalog issued "2000.".
catalog language "eng".
catalog publisher "Warrendale, Pa. : Materials Research Society,".
catalog relation "Structure and electronic properties of ultrathin dielectric films on silicon and related structures.".
catalog subject "621.3815/2 21".
catalog subject "Dielectric films Congresses.".
catalog subject "QC585.75.S55 S76 2000".
catalog subject "Silicon-on-insulator technology Congresses.".
catalog tableOfContents "Correlation Between Development of Leakage Current and Hydrogen Ionization in Ultrathin Silicon Dioxide Layers / V. V. Afanas'ev and A. Stesmans -- From Radiation Induced Leakage Current to Soft Breakdown in Irradiated MOS Devices With Ultrathin Gate Oxide / M. Ceschia, A. Paccagnella and A. Cester / [et al.] -- Low-Temperature Direct-Oxidation of Si Using Activated Oxygen Generated by Tungsten Catalytic Reaction / Manabu Kudo, Akira Izumi and Hideki Matsumura -- Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides / Sanjit Singh Dang and Christos G. Takoudis -- Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride / L. C. Chen, C. T. Wu and C.-Y. Wen / [et al.] -- Atomic-Scale Structure of the Si-SiO[subscript 2] and SiC-SiO[subscript 2] Interfaces and the Origin of Their Contrasting Properties / Ryszard Buczko, Stephen J. Pennycook and Sokrates T. Pantelides -- ".
catalog tableOfContents "Dielectric Properties of Bi[subscript 2]Ti[subscript 2]O[subscript 7] Thin Films With (111) Orientation / Zhuo Wang, J. Huang and S. W. Wang / [et al.] -- Ultrathin NO/N[subscript 2]O Oxynitride Dielectric For Advanced Flash Memory Application: Single Wafer and Batch Technology / R. Zonca, B. Crivelli and M. L. Polignano / [et al.] -- Evaluation of the Degradation Dynamics of Thin Silicon Dioxide Films Using Model-Independent Procedures / R. Rodriguez, M. Nafria and E. Miranda / [et al.] -- Chemical and Structural Characterization of Ultrathin Dielectric Films Using AEM / J. H. J. Scott and E. S. Windsor -- Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrodinger and Poisson Equations / C. Raynaud, J. L. Autran and P. Masson / [et al.] -- ".
catalog tableOfContents "Dynamics of Silicon Oxidation / A. M. Stoneham, M. A. Szymanski and A. L. Shluger -- Microscopic and Theoretical Investigations of the Si-SiO[subscript 2] Interface / G. Duscher, R. Buzcko and S. J. Pennycook / [et al.] -- Characterization of the P[subscript b1] Interface Defect in Thermal (100)Si/SiO[subscript 2] by Electron Spin Resonance: [superscript 29]Si Hyperfine Structure and Electrical Relevance / A. L. Stesmans -- Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100) / T. Hattori, H. Nohira and Y. Teramoto / [et al.] -- Defect States Due to Silicon Dangling Bonds at the Si(100)/SiO[subscript 2] Interface and the Passivation by Hydrogen Atoms / C. Kaneta, T. Yamasaki and T. Uchiyama / [et al.] -- Surface and Interfacial Topography of Oxides on Si(111) With Ultra-Low Atomic Step Density / Antonio C. Oliver and Jack M. Blakely -- ".
catalog tableOfContents "Initial Oxynitridation of a Si(001)-2xl Surface by NO / Noriyuki Miyata, Heiji Watanabe and Masakazu Ichikawa -- Low-Temperature Oxidation of Silicon(100) Substrates Using Atomic Oxygen / T. Ueno, S. Chikamura and F. Sakuraba / [et al.] -- Modification of Si(001)/SiO[subscript 2] Interfaces by Nitric Oxide Treatments: An Electron Paramagnetic Resonance Study / Jean-Louis Cantin and Hans Jurgen von Bardeleben -- Theoretical and Experimental Investigation of Ultrathin Oxynitrides / A. A. Demkov and R. Liu -- Paramagnetic Defects Related to Positive Charges in Silicon Oxynitride Films / Y. Miura, S. Fujieda and E. Hasegawa -- Furnace Oxynitridation in Nitric Oxide of Thin Silicon Oxide: Atomic Transport Mechanisms and Interfacial Microstructure / I. Trimaille, J.-J. Ganem and L. G. Gosset / [et al.] -- Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques / J. L. Autran, P. Masson and G. Ghibaudo -- ".
catalog tableOfContents "Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown / T. Nigam, R. Degraeve and G. Groeseneken / [et al.] -- Study of Stress-Induced Leakage Current in Thin Oxides Stressed by Corona Charging in Air: Relationship to GOI Defects / M. Wilson, J. Lagowski and A. Savtchou / [et al.] -- New Type of Superlattice: An Epitaxial Semiconductor-Atomic Superlattice, SAS / Raphael Tsu -- Quantum Confinement in Nanocrystalline Superlattices / G. F. Grom, P. M. Fauchet and L. Tsybeskov / [et al.] -- Multi-Million Atom Molecular-Dynamics Simulations of Stresses in Si(111)/Si[subscript 3]N[subscript 4] Nanopixels / Martina E. Bachlechner, Andrey Omeltchenko and Phillip Walsh / [et al.].".
catalog tableOfContents "Mesoscopic Transport in Broken Down Ultrathin SiO[subscript 2] Films / E. Miranda, N. Sune and R. Rodriguez / [et al.] -- Roles of Primary Hot Hole and FN Electron Fluences in Gate Oxide Breakdown / M. F. Li, Y. D. He and S. G. Ma / [et al.] -- A Study of Quasi-Breakdown Mechanism in Ultrathin Gate Oxide Under Various Types of Stress / Hao Guan, Zhen Xu and Byung Jin Cho / [et al.] -- Investigation of Quasi-Breakdown Mechanism in Ultrathin Gate Oxides / Hao Guan, Y. D. He and M. F. Li / [et al.] -- Correlation Between Gate Induced Drain Leakage and Plasma Induced Interface Traps / Siguang Ma, Yaohui Zhang and M. F. Li / [et al.] -- Effects of Reverse Biased Floating Voltage at Source and Drain During High-Field Electron Injection on the Performance of NMOSFETS / R. K. Jarwal and D. Misra -- Characterization of Ta[subscript 2]O[subscript 5] Thin Films With Small Current Leakage for High Density DRAMS / N. Kanda, R. Furukawa and M. Ishibashi / [et al.] -- ".
catalog tableOfContents "Photoluminescence Characterization of Defects in Thermal Oxide / Hiroyuki Nishikawa and James H. Stathis -- Impact of Temperature and Breakdown Statistics on Reliability Predictions for Ultrathin Oxides / G. Groeseneken, R. Degraeve and B. Kaczer / [et al.] -- Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique / A. Karamcheti, V. H. C. Watt and T. Y. Luo / [et al.] -- Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics from i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics / Gerry Lucovsky, Yider Wu and Yi-Mu Lee / [et al.] -- The Boundary Between Hard- and Soft-Breakdown in Ultrathin Silicon Dioxide Films / A. Toriumi and H. Satake -- A Study of Trap Profiles in Thin Silicon Dioxide Films at Dielectric Breakdown Using Percolation Model / S. Uno, A. Ishida and K. Okada / [et al.] -- ".
catalog tableOfContents "Room Temperature Ultraviolet Photoluminescence from 800[degree]C Thermally Oxidized Si[subscript 1-x-y]Ge[subscript x]C[subscript y] Thin Films on Si(100) Substrate / X. M. Cheng, Y. D. Zheng and L. Zang / [et al.] -- An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide / W. H. Lai, M. F. Li and J. S. Pan / [et al.] -- Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks / Hanyang Yang, Hiro Niimi and Gerry Lucovsky -- Structure Analysis of CeO[subscript 2]/ZrO[subscript 2]/Si Multilayer Thin Films by HRTEM / Takanori Kiguchi, Naoki Wakiya and Kazuo Shinozaki / [et al.] -- Controlling the Concentration and Position of Nitrogen in Ultrathin Oxynitride Films Formed by Using Oxygen and Nitrogen Radicals / K. Watanabe, M. Togo and T. Tatsumi -- ".
catalog tableOfContents "XPS Studies of the Si/SiO[subscript 2] Interface With Synchrotron Radiation / F. Rochet, F. Jolly and G. Dufour / [et al.] -- Precise Characterization of Ultrathin Nitride/Oxide Gate Dielectrics by Grazing X-ray Reflectance and Spectroscopic Ellipsometry / Pierre Boher, Jean Philippe Piel and Jean Louis Stehle -- Influence of Pre and Post Process Conditions on the Composition of Thin Si[subscript 3]N[subscript 4] Thin Films (3 nm) Studied by XPS and TOFSIMS / T. Conard, H. De Witte and W. Vandervorst / [et al.] -- Deposition and Characterization of Ultrathin Ta[subscript 2]O[subscript 5] Layers Deposited on Silicon From a Ta(OC[subscript 2]H[subscript 5])[subscript 5] Precursor / C. Chaneliere, J. L. Autran and J. P. Raynard / [et al.] -- Highly Reliable Thin Hafnium Oxide Gate Dielectric / Laegu Kang, Byoung-Hun Lee and Wen-Jie Qi / [et al.] -- Band Alignments of High-K Dielectrics on Si and Pt / J. Robertson, E. Riassi and J.-P. Maria / [et al.] -- ".
catalog title "Structure and electronic properties of ultrathin dielectric films on silicon and related structures / editors D.A. Buchanan ... [et al.].".
catalog type "Conference proceedings. fast".
catalog type "text".