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catalog contributor b12095799.
catalog created "2001.".
catalog date "2001".
catalog date "2001.".
catalog dateCopyrighted "2001.".
catalog description "A Three-Phase Model For The Structure Of Porous Thin Films Determined By X-ray Reflectivity And Small-Angle Neutron Scattering / W. Wu, E.K. Lin, C. Jin, J.T. Wetzel D5.22 -- Grazing Incidence Small Angle X-ray Scattering Study On Low Dielectric Thin Films / C. Hsu, H. Lee, K.S. Liang, U. Jeng, D. Windover, T. Lu, C. Jin D5.23 -- Processing, Characterization And Reliability Of Silica Xerogel Films For Interlayer Dielectric Applications / A. Jain, S. Rogojevic, F. Wang, W.N. Gill, P.C. Wayner, Jr., J.L. Plawsky, A. Haberl, W. Lanford D5.25 -- Sol-Gel Derived Silica Layers For Low-k Dielectrics Applications / S. Acosta, A. Ayral, C. Guizard, C. Lecornec, G. Passemard, M. Moussavi D5.26 -- Barrier and Seed Layer-Deposition Techniques -- Seed-Layer Deposition For Sub 0.25 Micron Cu Metallization Using A Line Cusp Magnetron Plasma Source / S. Wickramanayaka, H. Nagahama, E. Watanabe, T. Hayashi, M. Sato, Y. Nakagawa, S. Hasegawa, S. Mizuno, Y. Numasawa".
catalog description "A.H. Fischer, A.E. Zitzelsberger, M. Hommel, A. von Glasow D2.6 -- A Percolative Approach To Electromigration Modelling / C. Pennetta, L. Reggiani, G. Trefan, F. Fantini, A. Scorzoni, I. DeMunari D2.7 -- Effects Of Width Transitions On The Reliability Of Interconnects / C.S. Hau-Riege, C.V. Thompson, T.N. Marieb D2.8 -- Novel Low-k Dual-Phase Materials Prepared By PECVD / A. Grill, V.V. Patel D2.9 -- Low-k Dielectrics -- Study Of SiH[subscript 4]-Based PECVD Low-k Carbon-Doped Silicon Oxide / H. Yang, D.J. Tweet, L.H. Stecker, W. Pan, D.R. Evans, S. Hsu D3.3 -- Integration And Characterization Of Low Carbon Content SiO[subscript x]C[subscript y]H[subscript z] Low-k Materials For <0.18 [mu]m Dual Damascene Application / J-H. Lee, N. Chopra, J. Ma, Y-C. Lu, T-F. Huang, R. Willecke, W-F. Yau, D. Cheung, E. Yieh D3.4 -- Synthetic Control And Properties Of Processible Poly (methylsilsesquioxane)s /".
catalog description "C. Jin, J. Liu, X. Li, C. Coyle, J. Birnbaum, G.E. Fryxell, R.E. Williford, S. Baskaran D4.5 -- A Multilevel Metal Interconnect Technology With Intra-Metal Air-Gap ForB Quarter-Micron-And-Beyond High-Performance Processes / M. Lin, C. Chang, T. Huang, M. Lin, H. Lin D4.7 -- Fabrication Of Air-Gaps Between Cu Interconnects For Low Intralevel k / D.M. Bhusari, M.D. Wedlake, P.A. Kohl, C. Case, F.P. Klemens, J. Miner, B. Lee, R.J. Gutmann, J.J. Lee, R. Shick, L. Rhodes D4.8 -- Poster Session: Low-k Dielectrics -- Processing, Properties, And CMP Characteristics Of Spin-On Polymer:HSQ / W. Lin, C. Yang, W. Chen D5.1 -- Material Properties Of A SiOC Low Dielectric Constant Film With Extendibility To k <2.7 / E.S. Lopata, L. Young, J.T. Felts D5.3 -- Effects Of Curing Temperature On The Mechanical Reliability Of Low Dielectric-Constant Spin-On-Glasses / Y. Toivola, R.F. Cook, C. Saha D5.4 --".
catalog description "Characterization Of Fluorocarbon Deposition Of Fluorinated Amorphous Carbon Thin Films With Low Dielectric Constant And High Thermal Stability / S. Han, B. Bae D5.6 -- High-Temperature Mechanical Behavior And Phase Morphology Of Poly (tetrafluoroethylene)/siloxane Nanocomposites Used As Ultra Low-k Dielectrics / P. Xu, S. Qu, T. Rosenmayer, M. Lin D5.8 -- Structural Analyses Of Fluorine-Doped Silicon Dioxide Dielectric Thin Films By Micro-Raman Spectroscopy / J.L. Coffer, W. Zerda, K.J. Taylor, S. Martin D5.10 -- Study Of Dry Photoresist Stripping Processes For Hydrogen Silsesquioxane Thin Films / H. Liou, J. Duel, V. Finch, Q. Han, P. Sakthivel, R. Ruffin D5.11 -- Curing Study Of Hydrogen Silsesquioxane Under H[subscript 2]N[subscript 2] Ambient / H. Liou, E. Dehate, J. Duel, F. Dall D5.12 -- Characterization And Integration In Cu Damascene Structures Of AURORA, An Inorganic Low-k Dielectric /".
catalog description "Concentration And Stress Evolution During Electromigration In Passivated Al(0.25 at. % Cu) Conductor Lines / H. Kao, G. Cargill III, C. Hu D1.8 -- Interconnect Reliability -- Circuit-Level And Layout-Specific Interconnect Reliability Assessments / S.P. Hau-Riege, C.V. Thompson, C.S. Hau-Riege, V.K. Andleigh, Y. Chery, D. Troxel D2.2 -- Electromigration Reliability Of Dual-Damascene Cu/Oxide Interconnects / E.T. Ogawa, V.A. Blashchke, A. Bierwag, K. Lee, H. Matsuhashi, D. Griffiths, A. Ramamurthi, P.R. Justison, R.H. Havemann, P.S. Ho D2.3 -- Electromigration Characterization Versus Texture Analysis In Damascene Copper Interconnects / T. Berger, L. Arnaud, R. Gonella, I. Touet, G. Lormand D2.4 -- Via Electromigration Lifetime Improvement Of Aluminum Dual-Damascene Interconnects By Using Soft Low-k Organic SOG Interlayer Dielectrics / H. Kaneko, T. Usui, S. Ito, M. Hasunuma D2.5 -- Stress Migration Behavior Of Multilevel ULSI AlCu-Metallizations /".
catalog description "D6.3 -- Atomic Layer CVD For Continuously Shrinking Devices / S. Haukka, K. Elers, M. Tuominen D6.4 -- Properties Of TiN Thin Films Deposited By ALCVD As Barrier For Cu Metallization / A. Satta, G. Beyer, K. Maex, K. Elers, S. Haukka, A. Vantomme D6.5 -- A Study On CVD TaN As A Diffusion Barrier For Cu Interconnects / S. Im, S. Kim, K. Park, S. Cho, K. Kim D6.7 -- 2,2,6,6-tetramethyl-2-sila-3,5-heptanedione Route To The Chemical Vapori Deposition Of Copper For Gigascale Interconnect Applications / R.U. Claessen, J.T. Welch, P.J. Toscano, K.K. Banger, A.M. Kornilov, E.T. Eisenbraun, A.E. Kaloyeros D6.8 -- Interconnects -- Fabrication And Performance Limits Of Sub-0.1 [mu]m Cu Interconnects / T. Kuan, C. Inoki, G. Oehrlein, K. Rose, Y. Zhao, G. Wang, S. Rossnagel, C. Cabral D7.1 -- Tantalum-Nitride Diffusion Barrier Studies Using The Transient-Ion-Drift Technique For Copper Detection / T. Heiser, C. Brochard, M. Swaanen D7.3 --".
catalog description "Includes bibliographical references and index.".
catalog description "J. Lee, K. Char, H. Kim, H. Rhee, H. Ro, D. Yoo, D.Y. Yoon D3.6 -- Theoretical And Experimental Analysis Of The Low Dielectric Constant Of Fluorinated Silica / A.A. Demkov, S. Zollner, R. Liu, D. Werho, M. Kottke, R.B. Gregory, M. Angyal, S. Filipiak, G.B. Adams D3.8 -- Low-k Dielectrics--Porous Materials -- Structure And Property Characterization Of Porous Low-k Dielectric Constant Thin Films Using X-ray Reflectivity And Small Angle Neutron Scattering / E.K. Lin, W. Wu, C. Jin, J.T. Wetzel D4.1 -- Characterization Of Low-k Dielectric Films By Ellipsometric Porosimetry / M.R. Baklanov, K.P. Mogilnikov D4.2 -- Probing Pore Characteristics In Low-k Thin Films Using Positronium Annihilation Lifetime Spectroscopy / D.W. Gidley, W.E. Frieze, T.L. Dull, J.N. Sun, A.F. Yee D4.3 -- Ultra Low-k Mesoporous Silica Films: Synthesis, Film Properties And One-Level Copper Damascene Evaluation /".
catalog description "Mechanical Properties -- On The Mechanical Integrity Of Ultra Low Dielectric Constant Materials For Use In ULSI BEOL Structures / E.O. Shaffer II, K.E. Howard, M.E. Mills, P.H. Townsend III D1.1 -- Use Of The Four-Point Bending Technique For Determining The Strength Of Low K Dielectric/Barrier Interface / T.Y. Tsui, C. Goldberg, G. Braeckelmann, S. Filipiak, B. Ekstrom, J. Lee, E. Jackson, M. Herrick, J. Iacoponi, J.I. Martin, D. Sieloff D1.2 -- Effect Of Fatigue On The Adhesion And Subcritical Debonding Of Benzocyclobutene/Silicon Dioxide Interfaces / J.M. Snodgrass, R.H. Dauskardt D1.3 -- A Quantitative Study Of The Adhesion Between Copper, Barrier And Organic Low-k Materials / F. Lanckmans, S. Brongersma, I. Varga, H. Bender, E. Beyne, K. Maex D1.4 -- Nanoscale Elastic Imaging Of Aluminum/Low-k Dielectric Interconnect Structures / G.S. Shekhawat, O.V. Kolosov, G.A.D. Briggs, E.O. Shaffer, S. Martin, R.E. Geer D1.7 --".
catalog description "R.A. Donaton, B. Coenegrachts, E. Sleeckx, M. Schaekers, G. Sophie, N. Matsuki, M.R. Baklanov, H. Struyf, M. Lepage, S. Vanhaelemeersch, G. Beyer M. Stucchi, D. De Roest, K. Maex D5.14 -- Low Dielectric Constant Porous Silsesquioxane Films: Effect Of Thermal Treatment / Y. Siew, G. Sarkar, X. Hu, Y. Xu, A. See D5.15 -- Microstructure And Electronic Properties Of Thin Film Nanoporous Silica As A Function Of Processing And Annealing Methods / C. Caragianis-Broadbridge, J.R. Miecznikowski, W. Zhu, Z. Luo, J. Han, A. Hein Lehman D5.16 -- Photo-Induced Growth Of Low Dielectric Constant Porous Silica Film At Room Temperature / J-Y. Zhang, I.W. Boyd D5.17 -- Ultra Low-k Inorganic Silsequioxane Films With Tunable Electrical And Mechanical Properties / T. Deis, C. Saha, E.S. Moyer, K. Chung, Y. Liu, M.J. Spaulding, J. Albaugh, W. Chen, J.N. Bremmer D.18 --".
catalog description "Reliability Of Tantalum Based Diffusion Barriers Between Cu And Si / T. Laurila, K. Zeng, A. Seppala, J. Molarius, I. Suni, J.K. Kivilahti D7.4 -- Microstructural Analysis Of Copper Interconnections Using Picosecond Ultrasonics / J.M. Harper, S.G. Malhotra, C. Cabral, Jr., C. Lavoie, H. Hao, W. Homsi, H.J. Maris D7.5 -- Integrated CVD-PVD Al Plug Process For Sub-Quarter Micron Devices: Effects Of Underlayer On The Via Filling And The Microstructure Of The Al Film / W. Lee, Jung Joo Kim, Jun Junki Kim, J. Park, H. Kwon, H. Park, S. Rha D8.1 -- Backside Copper Contamination Issues In CMOS Process Integration -- A Case Study / K. Prasad, K. Tee, L. Chan, A.K. See D8.4 -- Localized Measurement Of Strains In Damascene Copper Interconnects By Convergent-Beam Electron Diffraction / J.A. Nucci, R.R. Keller, S. Kraemer, C.A. Volkert, M.E. Gross D8.5 --".
catalog description "Strain Measurements From Single Grains In Passivated Aluminum Conductor Lines By X-ray Microdiffraction During Electromigration / K.J. Hwang, S.G. Cargill III, T. Marieb D8.6 -- Experimental Studies Of The Reliability Of Interconnect Trees / S.P. Hau-Riege, C.V. Thompson D8.7.".
catalog extent "xvii, various paginations :".
catalog hasFormat "Materials, technology, and reliability for advanced interconnects and low-k dielectrics.".
catalog identifier "1558994270".
catalog isFormatOf "Materials, technology, and reliability for advanced interconnects and low-k dielectrics.".
catalog isPartOf "Materials Research Society symposia proceedings ; v. 612.".
catalog isPartOf "Materials Research Society symposium proceedings ; v. 612".
catalog issued "2001".
catalog issued "2001.".
catalog language "eng".
catalog publisher "Warrendale, Pa. : Materials Research Society,".
catalog relation "Materials, technology, and reliability for advanced interconnects and low-k dielectrics.".
catalog subject "621.3815/2 21".
catalog subject "Dielectric films Congresses.".
catalog subject "Integrated circuits Materials Congresses.".
catalog subject "Integrated circuits Reliability Congresses.".
catalog subject "Semiconductors Junctions Congresses.".
catalog subject "Semiconductors Materials Congresses.".
catalog subject "TK7871.85 .M36783 2001".
catalog tableOfContents "A Three-Phase Model For The Structure Of Porous Thin Films Determined By X-ray Reflectivity And Small-Angle Neutron Scattering / W. Wu, E.K. Lin, C. Jin, J.T. Wetzel D5.22 -- Grazing Incidence Small Angle X-ray Scattering Study On Low Dielectric Thin Films / C. Hsu, H. Lee, K.S. Liang, U. Jeng, D. Windover, T. Lu, C. Jin D5.23 -- Processing, Characterization And Reliability Of Silica Xerogel Films For Interlayer Dielectric Applications / A. Jain, S. Rogojevic, F. Wang, W.N. Gill, P.C. Wayner, Jr., J.L. Plawsky, A. Haberl, W. Lanford D5.25 -- Sol-Gel Derived Silica Layers For Low-k Dielectrics Applications / S. Acosta, A. Ayral, C. Guizard, C. Lecornec, G. Passemard, M. Moussavi D5.26 -- Barrier and Seed Layer-Deposition Techniques -- Seed-Layer Deposition For Sub 0.25 Micron Cu Metallization Using A Line Cusp Magnetron Plasma Source / S. Wickramanayaka, H. Nagahama, E. Watanabe, T. Hayashi, M. Sato, Y. Nakagawa, S. Hasegawa, S. Mizuno, Y. Numasawa".
catalog tableOfContents "A.H. Fischer, A.E. Zitzelsberger, M. Hommel, A. von Glasow D2.6 -- A Percolative Approach To Electromigration Modelling / C. Pennetta, L. Reggiani, G. Trefan, F. Fantini, A. Scorzoni, I. DeMunari D2.7 -- Effects Of Width Transitions On The Reliability Of Interconnects / C.S. Hau-Riege, C.V. Thompson, T.N. Marieb D2.8 -- Novel Low-k Dual-Phase Materials Prepared By PECVD / A. Grill, V.V. Patel D2.9 -- Low-k Dielectrics -- Study Of SiH[subscript 4]-Based PECVD Low-k Carbon-Doped Silicon Oxide / H. Yang, D.J. Tweet, L.H. Stecker, W. Pan, D.R. Evans, S. Hsu D3.3 -- Integration And Characterization Of Low Carbon Content SiO[subscript x]C[subscript y]H[subscript z] Low-k Materials For <0.18 [mu]m Dual Damascene Application / J-H. Lee, N. Chopra, J. Ma, Y-C. Lu, T-F. Huang, R. Willecke, W-F. Yau, D. Cheung, E. Yieh D3.4 -- Synthetic Control And Properties Of Processible Poly (methylsilsesquioxane)s /".
catalog tableOfContents "C. Jin, J. Liu, X. Li, C. Coyle, J. Birnbaum, G.E. Fryxell, R.E. Williford, S. Baskaran D4.5 -- A Multilevel Metal Interconnect Technology With Intra-Metal Air-Gap ForB Quarter-Micron-And-Beyond High-Performance Processes / M. Lin, C. Chang, T. Huang, M. Lin, H. Lin D4.7 -- Fabrication Of Air-Gaps Between Cu Interconnects For Low Intralevel k / D.M. Bhusari, M.D. Wedlake, P.A. Kohl, C. Case, F.P. Klemens, J. Miner, B. Lee, R.J. Gutmann, J.J. Lee, R. Shick, L. Rhodes D4.8 -- Poster Session: Low-k Dielectrics -- Processing, Properties, And CMP Characteristics Of Spin-On Polymer:HSQ / W. Lin, C. Yang, W. Chen D5.1 -- Material Properties Of A SiOC Low Dielectric Constant Film With Extendibility To k <2.7 / E.S. Lopata, L. Young, J.T. Felts D5.3 -- Effects Of Curing Temperature On The Mechanical Reliability Of Low Dielectric-Constant Spin-On-Glasses / Y. Toivola, R.F. Cook, C. Saha D5.4 --".
catalog tableOfContents "Characterization Of Fluorocarbon Deposition Of Fluorinated Amorphous Carbon Thin Films With Low Dielectric Constant And High Thermal Stability / S. Han, B. Bae D5.6 -- High-Temperature Mechanical Behavior And Phase Morphology Of Poly (tetrafluoroethylene)/siloxane Nanocomposites Used As Ultra Low-k Dielectrics / P. Xu, S. Qu, T. Rosenmayer, M. Lin D5.8 -- Structural Analyses Of Fluorine-Doped Silicon Dioxide Dielectric Thin Films By Micro-Raman Spectroscopy / J.L. Coffer, W. Zerda, K.J. Taylor, S. Martin D5.10 -- Study Of Dry Photoresist Stripping Processes For Hydrogen Silsesquioxane Thin Films / H. Liou, J. Duel, V. Finch, Q. Han, P. Sakthivel, R. Ruffin D5.11 -- Curing Study Of Hydrogen Silsesquioxane Under H[subscript 2]N[subscript 2] Ambient / H. Liou, E. Dehate, J. Duel, F. Dall D5.12 -- Characterization And Integration In Cu Damascene Structures Of AURORA, An Inorganic Low-k Dielectric /".
catalog tableOfContents "Concentration And Stress Evolution During Electromigration In Passivated Al(0.25 at. % Cu) Conductor Lines / H. Kao, G. Cargill III, C. Hu D1.8 -- Interconnect Reliability -- Circuit-Level And Layout-Specific Interconnect Reliability Assessments / S.P. Hau-Riege, C.V. Thompson, C.S. Hau-Riege, V.K. Andleigh, Y. Chery, D. Troxel D2.2 -- Electromigration Reliability Of Dual-Damascene Cu/Oxide Interconnects / E.T. Ogawa, V.A. Blashchke, A. Bierwag, K. Lee, H. Matsuhashi, D. Griffiths, A. Ramamurthi, P.R. Justison, R.H. Havemann, P.S. Ho D2.3 -- Electromigration Characterization Versus Texture Analysis In Damascene Copper Interconnects / T. Berger, L. Arnaud, R. Gonella, I. Touet, G. Lormand D2.4 -- Via Electromigration Lifetime Improvement Of Aluminum Dual-Damascene Interconnects By Using Soft Low-k Organic SOG Interlayer Dielectrics / H. Kaneko, T. Usui, S. Ito, M. Hasunuma D2.5 -- Stress Migration Behavior Of Multilevel ULSI AlCu-Metallizations /".
catalog tableOfContents "D6.3 -- Atomic Layer CVD For Continuously Shrinking Devices / S. Haukka, K. Elers, M. Tuominen D6.4 -- Properties Of TiN Thin Films Deposited By ALCVD As Barrier For Cu Metallization / A. Satta, G. Beyer, K. Maex, K. Elers, S. Haukka, A. Vantomme D6.5 -- A Study On CVD TaN As A Diffusion Barrier For Cu Interconnects / S. Im, S. Kim, K. Park, S. Cho, K. Kim D6.7 -- 2,2,6,6-tetramethyl-2-sila-3,5-heptanedione Route To The Chemical Vapori Deposition Of Copper For Gigascale Interconnect Applications / R.U. Claessen, J.T. Welch, P.J. Toscano, K.K. Banger, A.M. Kornilov, E.T. Eisenbraun, A.E. Kaloyeros D6.8 -- Interconnects -- Fabrication And Performance Limits Of Sub-0.1 [mu]m Cu Interconnects / T. Kuan, C. Inoki, G. Oehrlein, K. Rose, Y. Zhao, G. Wang, S. Rossnagel, C. Cabral D7.1 -- Tantalum-Nitride Diffusion Barrier Studies Using The Transient-Ion-Drift Technique For Copper Detection / T. Heiser, C. Brochard, M. Swaanen D7.3 --".
catalog tableOfContents "J. Lee, K. Char, H. Kim, H. Rhee, H. Ro, D. Yoo, D.Y. Yoon D3.6 -- Theoretical And Experimental Analysis Of The Low Dielectric Constant Of Fluorinated Silica / A.A. Demkov, S. Zollner, R. Liu, D. Werho, M. Kottke, R.B. Gregory, M. Angyal, S. Filipiak, G.B. Adams D3.8 -- Low-k Dielectrics--Porous Materials -- Structure And Property Characterization Of Porous Low-k Dielectric Constant Thin Films Using X-ray Reflectivity And Small Angle Neutron Scattering / E.K. Lin, W. Wu, C. Jin, J.T. Wetzel D4.1 -- Characterization Of Low-k Dielectric Films By Ellipsometric Porosimetry / M.R. Baklanov, K.P. Mogilnikov D4.2 -- Probing Pore Characteristics In Low-k Thin Films Using Positronium Annihilation Lifetime Spectroscopy / D.W. Gidley, W.E. Frieze, T.L. Dull, J.N. Sun, A.F. Yee D4.3 -- Ultra Low-k Mesoporous Silica Films: Synthesis, Film Properties And One-Level Copper Damascene Evaluation /".
catalog tableOfContents "Mechanical Properties -- On The Mechanical Integrity Of Ultra Low Dielectric Constant Materials For Use In ULSI BEOL Structures / E.O. Shaffer II, K.E. Howard, M.E. Mills, P.H. Townsend III D1.1 -- Use Of The Four-Point Bending Technique For Determining The Strength Of Low K Dielectric/Barrier Interface / T.Y. Tsui, C. Goldberg, G. Braeckelmann, S. Filipiak, B. Ekstrom, J. Lee, E. Jackson, M. Herrick, J. Iacoponi, J.I. Martin, D. Sieloff D1.2 -- Effect Of Fatigue On The Adhesion And Subcritical Debonding Of Benzocyclobutene/Silicon Dioxide Interfaces / J.M. Snodgrass, R.H. Dauskardt D1.3 -- A Quantitative Study Of The Adhesion Between Copper, Barrier And Organic Low-k Materials / F. Lanckmans, S. Brongersma, I. Varga, H. Bender, E. Beyne, K. Maex D1.4 -- Nanoscale Elastic Imaging Of Aluminum/Low-k Dielectric Interconnect Structures / G.S. Shekhawat, O.V. Kolosov, G.A.D. Briggs, E.O. Shaffer, S. Martin, R.E. Geer D1.7 --".
catalog tableOfContents "R.A. Donaton, B. Coenegrachts, E. Sleeckx, M. Schaekers, G. Sophie, N. Matsuki, M.R. Baklanov, H. Struyf, M. Lepage, S. Vanhaelemeersch, G. Beyer M. Stucchi, D. De Roest, K. Maex D5.14 -- Low Dielectric Constant Porous Silsesquioxane Films: Effect Of Thermal Treatment / Y. Siew, G. Sarkar, X. Hu, Y. Xu, A. See D5.15 -- Microstructure And Electronic Properties Of Thin Film Nanoporous Silica As A Function Of Processing And Annealing Methods / C. Caragianis-Broadbridge, J.R. Miecznikowski, W. Zhu, Z. Luo, J. Han, A. Hein Lehman D5.16 -- Photo-Induced Growth Of Low Dielectric Constant Porous Silica Film At Room Temperature / J-Y. Zhang, I.W. Boyd D5.17 -- Ultra Low-k Inorganic Silsequioxane Films With Tunable Electrical And Mechanical Properties / T. Deis, C. Saha, E.S. Moyer, K. Chung, Y. Liu, M.J. Spaulding, J. Albaugh, W. Chen, J.N. Bremmer D.18 --".
catalog tableOfContents "Reliability Of Tantalum Based Diffusion Barriers Between Cu And Si / T. Laurila, K. Zeng, A. Seppala, J. Molarius, I. Suni, J.K. Kivilahti D7.4 -- Microstructural Analysis Of Copper Interconnections Using Picosecond Ultrasonics / J.M. Harper, S.G. Malhotra, C. Cabral, Jr., C. Lavoie, H. Hao, W. Homsi, H.J. Maris D7.5 -- Integrated CVD-PVD Al Plug Process For Sub-Quarter Micron Devices: Effects Of Underlayer On The Via Filling And The Microstructure Of The Al Film / W. Lee, Jung Joo Kim, Jun Junki Kim, J. Park, H. Kwon, H. Park, S. Rha D8.1 -- Backside Copper Contamination Issues In CMOS Process Integration -- A Case Study / K. Prasad, K. Tee, L. Chan, A.K. See D8.4 -- Localized Measurement Of Strains In Damascene Copper Interconnects By Convergent-Beam Electron Diffraction / J.A. Nucci, R.R. Keller, S. Kraemer, C.A. Volkert, M.E. Gross D8.5 --".
catalog tableOfContents "Strain Measurements From Single Grains In Passivated Aluminum Conductor Lines By X-ray Microdiffraction During Electromigration / K.J. Hwang, S.G. Cargill III, T. Marieb D8.6 -- Experimental Studies Of The Reliability Of Interconnect Trees / S.P. Hau-Riege, C.V. Thompson D8.7.".
catalog title "Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A / editors, G.S. Oehrlein ... [et al.].".
catalog type "Conference proceedings. fast".
catalog type "San Francisco (Calif., 2000) swd".
catalog type "text".