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- catalog contributor b12556847.
- catalog created "c2002.".
- catalog date "2002".
- catalog date "c2002.".
- catalog dateCopyrighted "c2002.".
- catalog description "Includes bibliographical references and indexes.".
- catalog description "Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering / J. Zhao, X.D. Zhang and Z.C. Feng / [and others] -- Successes and Predictions of a Pseudopotential Approach in Anion-Mixed Nitrides / L. Bellaiche, A. Al-Yacoub and N.A. Modine / [et al.] -- The Role of Nitrogen-Induced Localization and Defects in InGaAsN ([is approximately equal to] 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition / Steven R. Kurtz, A.A. Allerman and J.F. Klem / [et al.] -- Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition / J.C. Roberts, B.F. Moody and P. Barletta / [et al.].".
- catalog extent "xix, 732 p. :".
- catalog hasFormat "Progress in semiconductor materials for optoelectronic applications.".
- catalog identifier "1558996281".
- catalog isFormatOf "Progress in semiconductor materials for optoelectronic applications.".
- catalog isPartOf "Materials Research Society symposia proceedings ; v. 692.".
- catalog isPartOf "Materials Research Society symposium proceedings ; v. 692".
- catalog issued "2002".
- catalog issued "c2002.".
- catalog language "eng".
- catalog publisher "Warrendale, Penn. : Materials Research Society,".
- catalog relation "Progress in semiconductor materials for optoelectronic applications.".
- catalog subject "621.381/045 21".
- catalog subject "Nitrides Congresses.".
- catalog subject "Optoelectronics Materials Congresses.".
- catalog subject "Semiconductors Congresses.".
- catalog subject "TA1750 .P76 2002".
- catalog tableOfContents "Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering / J. Zhao, X.D. Zhang and Z.C. Feng / [and others] -- Successes and Predictions of a Pseudopotential Approach in Anion-Mixed Nitrides / L. Bellaiche, A. Al-Yacoub and N.A. Modine / [et al.] -- The Role of Nitrogen-Induced Localization and Defects in InGaAsN ([is approximately equal to] 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition / Steven R. Kurtz, A.A. Allerman and J.F. Klem / [et al.] -- Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition / J.C. Roberts, B.F. Moody and P. Barletta / [et al.].".
- catalog title "Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A. / editors, Eric D. Jones ... [et al.].".
- catalog type "Boston (Mass., 2001) swd".
- catalog type "Conference proceedings. fast".
- catalog type "Kongress. swd".
- catalog type "text".