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- 2002018064 alternative "3-5 nitride semiconductors".
- 2002018064 alternative "Three-five nitride semiconductors".
- 2002018064 contributor B9210615.
- 2002018064 created "2003.".
- 2002018064 date "2003".
- 2002018064 date "2003.".
- 2002018064 dateCopyrighted "2003.".
- 2002018064 description "Includes bibliographical references and index.".
- 2002018064 description "Machine generated contents note: About the Series vii --Preface ix --Introduction xi 1 Ohmic Contacts to GaN I -- M. W Cole and P C. Joshi --2 Characterization of Schottky Contacts on Nitride Semiconductors 67 -- LS. Yu and E.T. Yu --3 Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off 107 -- W.S. Wong, TD. Sands, andN.W. Cheung --4 Spontaneous and Piezoelectric Polarization in Nitride Heterostructures 161 -- E.T. Yu --5 AlGaN/GaN High Electron Mobility Transistors 193 -- R. Gaska, M.S. Shur, and A. Khan --6 Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors 271 -- N. Maeda and N. Kobayashi --7 Electron Transport in Wide-Bandgap Semiconductors and Heterostructures 309 -- N.A. Zakhleniuk, B.K. Ridley, and C.R. Bennett --8 GaN Metal-Semiconductor Field-Effect Transistor 369 -- T: Egawa and M. Umeno --9 Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells 399 -- T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki 10 AlGaInN MQW Laser Diodes 439 -- D.P Bour and M. Kneissl --11 Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers 503 -- T. Someya, K. Tachibana, and Y. Arakawa --12 III-Nitride-Based UV Photodetectors 525 -- E. Monroy, E Calle, E. Muioz, and F Omnks --13 III-Nitride Ultraviolet Photodetectors 593 -- J.C. Carrano --14 AIGaN UV Photodetectors 675 -- W. Yang --Index 693.".
- 2002018064 extent "xiv, 700 p. :".
- 2002018064 identifier "1560329742".
- 2002018064 identifier 2002018064-d.html.
- 2002018064 identifier 2002018064.html.
- 2002018064 isPartOf "Optoelectronic properties of semiconductors and superlattices ; v. 16".
- 2002018064 issued "2003".
- 2002018064 issued "2003.".
- 2002018064 language "eng".
- 2002018064 publisher "New York : Taylor & Francis,".
- 2002018064 subject "621.3815/2 21".
- 2002018064 subject "Nitrides.".
- 2002018064 subject "Semiconductors Materials.".
- 2002018064 subject "TK7871.15.N57 .A1297 2003".
- 2002018064 tableOfContents "Machine generated contents note: About the Series vii --Preface ix --Introduction xi 1 Ohmic Contacts to GaN I -- M. W Cole and P C. Joshi --2 Characterization of Schottky Contacts on Nitride Semiconductors 67 -- LS. Yu and E.T. Yu --3 Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off 107 -- W.S. Wong, TD. Sands, andN.W. Cheung --4 Spontaneous and Piezoelectric Polarization in Nitride Heterostructures 161 -- E.T. Yu --5 AlGaN/GaN High Electron Mobility Transistors 193 -- R. Gaska, M.S. Shur, and A. Khan --6 Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors 271 -- N. Maeda and N. Kobayashi --7 Electron Transport in Wide-Bandgap Semiconductors and Heterostructures 309 -- N.A. Zakhleniuk, B.K. Ridley, and C.R. Bennett --8 GaN Metal-Semiconductor Field-Effect Transistor 369 -- T: Egawa and M. Umeno --9 Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells 399 -- T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki 10 AlGaInN MQW Laser Diodes 439 -- D.P Bour and M. Kneissl --11 Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers 503 -- T. Someya, K. Tachibana, and Y. Arakawa --12 III-Nitride-Based UV Photodetectors 525 -- E. Monroy, E Calle, E. Muioz, and F Omnks --13 III-Nitride Ultraviolet Photodetectors 593 -- J.C. Carrano --14 AIGaN UV Photodetectors 675 -- W. Yang --Index 693.".
- 2002018064 title "3-5 nitride semiconductors".
- 2002018064 title "III-V nitride semiconductors : applications & devices / edited by E.T. Yu and M.O. Manasreh.".
- 2002018064 title "Three-five nitride semiconductors".
- 2002018064 type "text".