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- 2005933746 contributor B10400973.
- 2005933746 contributor B10400974.
- 2005933746 created "c2006.".
- 2005933746 date "2006".
- 2005933746 date "c2006.".
- 2005933746 dateCopyrighted "c2006.".
- 2005933746 description "Includes bibliographical references and index.".
- 2005933746 extent "vi, 217 p. :".
- 2005933746 identifier "0387280022 (hbk.)".
- 2005933746 identifier "9780387280028 (hbk.)".
- 2005933746 identifier 2005933746-d.html.
- 2005933746 identifier 2005933746-b.html.
- 2005933746 identifier 2005933746.html.
- 2005933746 issued "2006".
- 2005933746 issued "c2006.".
- 2005933746 language "eng".
- 2005933746 publisher "New York : Springer,".
- 2005933746 subject "Metal oxide semiconductor field-effect transistors Mathematical models.".
- 2005933746 subject "Nanostructured materials Mathematical models.".
- 2005933746 subject "Nanotechnology.".
- 2005933746 subject "T174.7 .L86 2006".
- 2005933746 title "Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo.".
- 2005933746 type "text".