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- 2006031518 alternative "Strained silicon heterostructure field effect devices".
- 2006031518 contributor B10443511.
- 2006031518 contributor B10443512.
- 2006031518 created "c2007.".
- 2006031518 date "2007".
- 2006031518 date "c2007.".
- 2006031518 dateCopyrighted "c2007.".
- 2006031518 description "Includes bibliographical references and index.".
- 2006031518 extent "423 p. :".
- 2006031518 identifier "0750309938 (alk. paper)".
- 2006031518 identifier "9780750309936 (alk. paper)".
- 2006031518 identifier 2006031518-d.html.
- 2006031518 identifier 2006031518.html.
- 2006031518 isPartOf "Series in materials science and engineering".
- 2006031518 issued "2007".
- 2006031518 issued "c2007.".
- 2006031518 language "eng".
- 2006031518 publisher "New York : Taylor & Francis,".
- 2006031518 subject "621.3815/284 22".
- 2006031518 subject "Metal oxide semiconductor field-effect transistors.".
- 2006031518 subject "Silicon Electric properties.".
- 2006031518 subject "TK7871.95 .M27 2007".
- 2006031518 title "Strained silicon heterostructure field effect devices".
- 2006031518 title "Strained-Si heterostructure field effect devices / C.K. Maiti, S. Chattopadhyay, L.K. Bera.".
- 2006031518 type "text".