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- 2007358987 contributor B10883540.
- 2007358987 created "2006.".
- 2007358987 date "2006".
- 2007358987 date "2006.".
- 2007358987 dateCopyrighted "2006.".
- 2007358987 description "Includes bibliographical references (p. 123-132).".
- 2007358987 description "Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 16228.".
- 2007358987 extent "xiii, 133 p. :".
- 2007358987 identifier "3866280874".
- 2007358987 identifier 2007358987.html.
- 2007358987 isPartOf "Series in microelectronics, 0936-5362 ; v. 174".
- 2007358987 issued "2006".
- 2007358987 issued "2006.".
- 2007358987 language "eng ger".
- 2007358987 language "eng".
- 2007358987 publisher "Konstanz : Hartnung-Gorre,".
- 2007358987 subject "621.39/732 22".
- 2007358987 subject "Metal oxide semiconductor field-effect transistors Mathematical models.".
- 2007358987 subject "Metal oxide semiconductors Mathematical models.".
- 2007358987 subject "TK7871.99.M44 H65 2006".
- 2007358987 title "Quantum-mechanical modeling of transport parameters for MOS devices / Timm Höhr.".
- 2007358987 type "text".