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Matches in Library of Congress for { <http://lccn.loc.gov/2007935904> ?p ?o. }

• 2007935904 contributor B11065245.
• 2007935904 created "c2008.".
• 2007935904 date "2008".
• 2007935904 date "c2008.".
• 2007935904 dateCopyrighted "c2008.".
• 2007935904 description "Cover -- TOC$Table of Content -- Preface -- Contributors -- CH$1 The SOI MOSFET: from Single Gate to Multigate -- 1.1 MOSFET scaling and Moore's law -- 1.2 Short-Channel Effects -- 1.3 Gate Geometry and Electrostatic Integrity -- 1.4 A Brief History of Multiple-Gate MOSFETs -- 1.4.1 Single-gate SOI MOSFETs -- 1.4.2 Double-gate SOI MOSFETs -- 1.4.3 Triple-gate SOI MOSFETs -- 1.4.4 Surrounding-gate (quadruple-gate) SOI MOSFETs -- 1.4.5 Other multigate MOSFET structures -- 1.4.6 Multigate MOSFET memory devices -- 1.5 Multigate MOSFET Physics -- 1.5.1 Classical physics -- 1.5.2 Quantum effects -- References -- CH$2 Multigate MOSFET Technology -- 2.1 Introduction -- 2.2 Active Area: Fins -- 2.2.1 Fin Width -- 2.2.2 Fin Height and Fin Pitch -- 2.2.3 Fin Surface Crystal Orientation -- 2.2.4 Fin Surface Preparation -- 2.2.5 Fins on Bulk Silicon -- 2.2.6 Nano-wires and Self-Assembled Wires -- 2.3 Gate Stack -- 2.3.1 Gate Patterning -- 2.3.2 Threshold Voltage and Gate Workfunction Requirements -- 2.3.3 Gate EWF and Gate Induced Drain Leakage (GIDL) -- 2.3.4 Independently Controlled Gates -- 2.4 Source/Drain Resistance and Capacitance -- 2.4.1 Doping the Thin Fins -- 2.4.2 Junction Depth -- 2.4.3 Parasitic Resistance/Capacitance and Raised Source and Drain Structure -- 2.5 Mobility and Strain Engineering -- 2.5.1 Introduction -- 2.5.2 Wafer Bending Experiment -- 2.5.3 Nitride Stress Liners -- 2.5.4 Embedded SiGe and SiC Source and Drain -- 2.5.5 Local Strain from Gate Electrode -- 2.5.6 Substrate Strain: Strained Silicon on Insulator -- 2.6 Contacts to the Fins -- 2.6.1 Dumbbell source and drain contact -- 2.6.2 Saddle contact -- 2.6.3 Contact to merged fins -- Acknowledgments -- References -- CH$3 BSIM-CMG: A Compact Model for Multi-Gate Transistors -- 3.1 Introduction -- 3.2 Framework for Multigate FET Modeling -- 3.3 Multigate Models: BSIM-CMG and BSIM-IMG -- 3.3.1 The BSIM-CMG Model -- 3.3.2 The BSIM-IMG Model -- 3.4 BSIM-CMG -- 3.4.1 Core Model -- 3.4.2 Modeling Physical Effects of Real Devices -- 3.4.3 Experimental Verification -- 3.5 The BSIM-IMG Model -- 3.5.1 Surface Potential of independent DG-FET -- 3.5.2 BSIM-IMG features -- 3.6 Summary -- References -- CH$4 Physics of the Multigate MOS System -- 4.1 Device electrostatics -- 4.2 Double gate MOS system -- 4.2.1 Modeling assumptions -- 4.2.2 Gate voltage effect -- 4.2.3 Semiconductor thickness effect -- 4.2.4 Asymmetry effects -- 4.2.5 Oxide thickness effect -- 4.2.6 Electron tunnel current -- 4.3 Two-dimensional confinement -- References -- CH$5 Mobility in Multigate MOSFETs -- 5.1 Introduction -- 5.2 Double-Gate MOSFETs and FinFETs -- 5.2.1 Phonon-limited mobility -- 5.2.2 Confinement of acoustic phonons -- 5.2.3 Interface.".
• 2007935904 description "Includes bibliographical references and index.".
• 2007935904 extent "xiii, 339 p. :".
• 2007935904 identifier "038771751X (hdbk. : acid-free paper)".
• 2007935904 identifier "9780387717517(hdbk. : acid-free paper)".
• 2007935904 identifier 2007935904-d.html.
• 2007935904 identifier 2007935904-t.html.
• 2007935904 isPartOf "Series on integrated circuits and systems".
• 2007935904 isPartOf "Series on integrated circuits and systems.".
• 2007935904 issued "2008".
• 2007935904 issued "c2008.".
• 2007935904 language "eng".
• 2007935904 publisher "New York : Springer,".
• 2007935904 subject "621.381528 22".
• 2007935904 subject "Metal oxide semiconductor field-effect transistors.".
• 2007935904 subject "Silicon-on-insulator technology.".
• 2007935904 subject "TK7872.T73 F56 2008".
• 2007935904 tableOfContents "Cover -- TOC$Table of Content -- Preface -- Contributors -- CH$1 The SOI MOSFET: from Single Gate to Multigate -- 1.1 MOSFET scaling and Moore's law -- 1.2 Short-Channel Effects -- 1.3 Gate Geometry and Electrostatic Integrity -- 1.4 A Brief History of Multiple-Gate MOSFETs -- 1.4.1 Single-gate SOI MOSFETs -- 1.4.2 Double-gate SOI MOSFETs -- 1.4.3 Triple-gate SOI MOSFETs -- 1.4.4 Surrounding-gate (quadruple-gate) SOI MOSFETs -- 1.4.5 Other multigate MOSFET structures -- 1.4.6 Multigate MOSFET memory devices -- 1.5 Multigate MOSFET Physics -- 1.5.1 Classical physics -- 1.5.2 Quantum effects -- References -- CH$2 Multigate MOSFET Technology -- 2.1 Introduction -- 2.2 Active Area: Fins -- 2.2.1 Fin Width -- 2.2.2 Fin Height and Fin Pitch -- 2.2.3 Fin Surface Crystal Orientation -- 2.2.4 Fin Surface Preparation -- 2.2.5 Fins on Bulk Silicon -- 2.2.6 Nano-wires and Self-Assembled Wires -- 2.3 Gate Stack -- 2.3.1 Gate Patterning -- 2.3.2 Threshold Voltage and Gate Workfunction Requirements -- 2.3.3 Gate EWF and Gate Induced Drain Leakage (GIDL) -- 2.3.4 Independently Controlled Gates -- 2.4 Source/Drain Resistance and Capacitance -- 2.4.1 Doping the Thin Fins -- 2.4.2 Junction Depth -- 2.4.3 Parasitic Resistance/Capacitance and Raised Source and Drain Structure -- 2.5 Mobility and Strain Engineering -- 2.5.1 Introduction -- 2.5.2 Wafer Bending Experiment -- 2.5.3 Nitride Stress Liners -- 2.5.4 Embedded SiGe and SiC Source and Drain -- 2.5.5 Local Strain from Gate Electrode -- 2.5.6 Substrate Strain: Strained Silicon on Insulator -- 2.6 Contacts to the Fins -- 2.6.1 Dumbbell source and drain contact -- 2.6.2 Saddle contact -- 2.6.3 Contact to merged fins -- Acknowledgments -- References -- CH$3 BSIM-CMG: A Compact Model for Multi-Gate Transistors -- 3.1 Introduction -- 3.2 Framework for Multigate FET Modeling -- 3.3 Multigate Models: BSIM-CMG and BSIM-IMG -- 3.3.1 The BSIM-CMG Model -- 3.3.2 The BSIM-IMG Model -- 3.4 BSIM-CMG -- 3.4.1 Core Model -- 3.4.2 Modeling Physical Effects of Real Devices -- 3.4.3 Experimental Verification -- 3.5 The BSIM-IMG Model -- 3.5.1 Surface Potential of independent DG-FET -- 3.5.2 BSIM-IMG features -- 3.6 Summary -- References -- CH$4 Physics of the Multigate MOS System -- 4.1 Device electrostatics -- 4.2 Double gate MOS system -- 4.2.1 Modeling assumptions -- 4.2.2 Gate voltage effect -- 4.2.3 Semiconductor thickness effect -- 4.2.4 Asymmetry effects -- 4.2.5 Oxide thickness effect -- 4.2.6 Electron tunnel current -- 4.3 Two-dimensional confinement -- References -- CH$5 Mobility in Multigate MOSFETs -- 5.1 Introduction -- 5.2 Double-Gate MOSFETs and FinFETs -- 5.2.1 Phonon-limited mobility -- 5.2.2 Confinement of acoustic phonons -- 5.2.3 Interface.".
• 2007935904 title "FinFETs and other multi-gate transistors / Jean-Pierre Colinge, editor.".
• 2007935904 type "text".