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2007938756 contributor B11067223.
2007938756 created "c2008.".
2007938756 date "2008".
2007938756 date "c2008.".
2007938756 dateCopyrighted "c2008.".
2007938756 description "Cover -- TOC-- Contents -- CH. 1. Introduction to mm-Wave Silicon Devices, Circuits, and Systems -- 1.1 Introduction -- 1.2 Whymm-Waves? -- 1.3 The Birth of Silicon mm-Wave -- 1.3.1 Why CMOS? -- 1.3.2 True Cost of Silicon mm-Wave -- 1.4 Communication in the 60 GHz Band -- 1.4.1 BeamForming -- 1.5 Uniquemm-WaveApplications -- 1.5.1 mm-Wave Spectrum -- 1.5.2 Automotive Radar -- 1.5.3 mm-Wave Imaging forMedicalApplications -- 1.5.4 Collaborative DistributedMIMO -- 1.6 Overview of Book -- References -- CH. 2. Silicon Technologies to Address mm-Wave Solutions -- 2.1 Why Silicon? -- 2.1.1 Performance -- 2.1.2 Cost, Integration [3] -- 2.1.3 ManufacturingCapacity -- 2.2 Modern SiGe and CMOS Technology -- 2.2.1 Lithography -- 2.2.2 Low-K Dielectrics and CopperWiring -- 2.2.3 Mobility and Strain Engineering -- 2.2.4 Metal Gates &High-K Dielectrics -- 2.3 Active Devices on Recent Bulk and SOI Technologies -- 2.3.1 Bipolar Devices -- 2.3.2 CMOS devices -- 2.3.3 SOI CMOS devices -- 2.3.4 Current Density Scaling for CMOS and Bipolar Devices -- 2.3.5 Comparison Between State-of-the-Art HBT and CMOS Devices -- 2.4 Impact of the Back-End of Line onmm-WaveDesign -- 2.5 Conclusion -- 2.6 Acknowledgements: -- References -- CH. 3. Design and Modeling of Active and Passive Devices -- 3.1 Passive Devices -- 3.1.1 Transmission Lines -- 3.1.2 Inductors -- 3.1.3 Capacitors -- 3.1.4 Transformers -- 3.1.5 Resonators -- 3.2 Active Devices -- 3.2.1 Modeling -- 3.2.2 Active Device Design -- 3.2.3 Small-SignalModel -- 3.2.4 Large-SignalModel -- 3.2.5 FET NoiseModel -- 3.3 Conclusion -- References -- CH. 4. Amplifiers and Mixers -- 4.1 60GHz Low-NoiseAmpli.ers:What's Different? -- 4.1.1 Transistors Closer to Cutoff -- 4.1.2 SmallWavelengths -- 4.1.3 Parasitics at 60 GHz -- 4.2 Low-NoiseAmplifier Design Methodology -- 4.2.1 Input Match Optimization for Noise and Power -- 4.2.2 Transistor Noise Parameters -- 4.2.3 Common-Base vs. Common-Emitter -- 4.3 Low-NoiseAmpli.er Examples -- 4.3.1 Bipolar LNA (v1), Common-Base Input -- 4.3.2 Bipolar LNA (v2), Common-Emitter Input -- 4.3.3 CMOS Common SourceAmpli.ers -- 4.3.4 CMOS CommonGateAmplifiers -- 4.3.5 Differential PairAmplifiers -- 4.3.6 Multi-Stage Amplifier Design -- 4.3.7 ATwo-Stage 30 GHzAmplifier -- 4.4 Mixers and FrequencyTranslation -- 4.4.1 Single TransistorMixers -- 4.4.2 Dual GateMixers -- 4.4.3 Gilbert CellMixers -- 4.5 Examples of Integrated Front-Ends -- 4.5.1 CMOS 130nm 60 GHz Front-End -- 4.5.2 SiGe Transceiver Chipset -- 4.6 Conclusion -- References -- CH. 5. Voltage-Controlled Oscillators and Frequency Dividers -- 5.1 Considerations ofVCOs -- 5.2 Cross-Coupled Oscillators -- 5.".
2007938756 description "Includes bibliographical references and index.".
2007938756 extent "xv, 301 p. :".
2007938756 identifier "0387765581 (hbk. : alk. paper)".
2007938756 identifier "9780387765587 (hbk. : alk. paper)".
2007938756 identifier "9780387765617 (e-ISBN)".
2007938756 identifier 2007938756-d.html.
2007938756 identifier 2007938756-t.html.
2007938756 isPartOf "Series on integrated circuits and systems".
2007938756 isPartOf "Series on integrated circuits and systems.".
2007938756 issued "2008".
2007938756 issued "c2008.".
2007938756 language "eng".
2007938756 publisher "New York : Springer Science+Business Media,".
2007938756 subject "621.3815 22".
2007938756 subject "Integrated circuits Materials.".
2007938756 subject "Millimeter wave communication systems.".
2007938756 subject "Millimeter wave devices Design and construction.".
2007938756 subject "Silicon Electric properties.".
2007938756 subject "TK7876.5 .M59 2008".
2007938756 tableOfContents "Cover -- TOC-- Contents -- CH. 1. Introduction to mm-Wave Silicon Devices, Circuits, and Systems -- 1.1 Introduction -- 1.2 Whymm-Waves? -- 1.3 The Birth of Silicon mm-Wave -- 1.3.1 Why CMOS? -- 1.3.2 True Cost of Silicon mm-Wave -- 1.4 Communication in the 60 GHz Band -- 1.4.1 BeamForming -- 1.5 Uniquemm-WaveApplications -- 1.5.1 mm-Wave Spectrum -- 1.5.2 Automotive Radar -- 1.5.3 mm-Wave Imaging forMedicalApplications -- 1.5.4 Collaborative DistributedMIMO -- 1.6 Overview of Book -- References -- CH. 2. Silicon Technologies to Address mm-Wave Solutions -- 2.1 Why Silicon? -- 2.1.1 Performance -- 2.1.2 Cost, Integration [3] -- 2.1.3 ManufacturingCapacity -- 2.2 Modern SiGe and CMOS Technology -- 2.2.1 Lithography -- 2.2.2 Low-K Dielectrics and CopperWiring -- 2.2.3 Mobility and Strain Engineering -- 2.2.4 Metal Gates &High-K Dielectrics -- 2.3 Active Devices on Recent Bulk and SOI Technologies -- 2.3.1 Bipolar Devices -- 2.3.2 CMOS devices -- 2.3.3 SOI CMOS devices -- 2.3.4 Current Density Scaling for CMOS and Bipolar Devices -- 2.3.5 Comparison Between State-of-the-Art HBT and CMOS Devices -- 2.4 Impact of the Back-End of Line onmm-WaveDesign -- 2.5 Conclusion -- 2.6 Acknowledgements: -- References -- CH. 3. Design and Modeling of Active and Passive Devices -- 3.1 Passive Devices -- 3.1.1 Transmission Lines -- 3.1.2 Inductors -- 3.1.3 Capacitors -- 3.1.4 Transformers -- 3.1.5 Resonators -- 3.2 Active Devices -- 3.2.1 Modeling -- 3.2.2 Active Device Design -- 3.2.3 Small-SignalModel -- 3.2.4 Large-SignalModel -- 3.2.5 FET NoiseModel -- 3.3 Conclusion -- References -- CH. 4. Amplifiers and Mixers -- 4.1 60GHz Low-NoiseAmpli.ers:What's Different? -- 4.1.1 Transistors Closer to Cutoff -- 4.1.2 SmallWavelengths -- 4.1.3 Parasitics at 60 GHz -- 4.2 Low-NoiseAmplifier Design Methodology -- 4.2.1 Input Match Optimization for Noise and Power -- 4.2.2 Transistor Noise Parameters -- 4.2.3 Common-Base vs. Common-Emitter -- 4.3 Low-NoiseAmpli.er Examples -- 4.3.1 Bipolar LNA (v1), Common-Base Input -- 4.3.2 Bipolar LNA (v2), Common-Emitter Input -- 4.3.3 CMOS Common SourceAmpli.ers -- 4.3.4 CMOS CommonGateAmplifiers -- 4.3.5 Differential PairAmplifiers -- 4.3.6 Multi-Stage Amplifier Design -- 4.3.7 ATwo-Stage 30 GHzAmplifier -- 4.4 Mixers and FrequencyTranslation -- 4.4.1 Single TransistorMixers -- 4.4.2 Dual GateMixers -- 4.4.3 Gilbert CellMixers -- 4.5 Examples of Integrated Front-Ends -- 4.5.1 CMOS 130nm 60 GHz Front-End -- 4.5.2 SiGe Transceiver Chipset -- 4.6 Conclusion -- References -- CH. 5. Voltage-Controlled Oscillators and Frequency Dividers -- 5.1 Considerations ofVCOs -- 5.2 Cross-Coupled Oscillators -- 5.".
2007938756 title "mm-Wave silicon technology : 60GHz and beyond / Ali M. Niknejad, Hossein Hashemi, editors.".
2007938756 type "text".