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- 2008276438 contributor B11146139.
- 2008276438 contributor B11146140.
- 2008276438 contributor B11146141.
- 2008276438 created "c2007.".
- 2008276438 date "2007".
- 2008276438 date "c2007.".
- 2008276438 dateCopyrighted "c2007.".
- 2008276438 description "Includes bibliographical references and index.".
- 2008276438 extent "x, 470 p. :".
- 2008276438 identifier "9781566775502".
- 2008276438 isPartOf "ECS transactions ; vol. 6, no. 1".
- 2008276438 issued "2007".
- 2008276438 issued "c2007.".
- 2008276438 language "eng".
- 2008276438 publisher "Pennington, N.J. : Electrochemical Society,".
- 2008276438 subject "621.3815 22".
- 2008276438 subject "Gate array circuits Materials Congresses.".
- 2008276438 subject "Metal oxide semiconductors Materials Congresses.".
- 2008276438 subject "Metal oxide semiconductors, Complementary Congresses.".
- 2008276438 subject "TK7871.99.M44 I548 2007".
- 2008276438 title "Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment / editors M.C. Őztrűrk ... [et al.].".
- 2008276438 type "text".