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- 2008936490 contributor B11387089.
- 2008936490 contributor B11387090.
- 2008936490 created "c2009.".
- 2008936490 date "2009".
- 2008936490 date "c2009.".
- 2008936490 dateCopyrighted "c2009.".
- 2008936490 description "Includes bibliographical references and index.".
- 2008936490 extent "xiv, 294 p. :".
- 2008936490 identifier "1848820585 (hbk.)".
- 2008936490 identifier "1848820593 (ebk.)".
- 2008936490 identifier "9781848820586 (hbk.)".
- 2008936490 identifier "9781848820593 (ebk.)".
- 2008936490 isPartOf "Engineering materials and processes".
- 2008936490 isPartOf "Engineering materials and processes.".
- 2008936490 issued "2009".
- 2008936490 issued "c2009.".
- 2008936490 language "eng".
- 2008936490 publisher "London : Springer,".
- 2008936490 subject "621.38152 22".
- 2008936490 subject "QC611.6.D4 S43 2009".
- 2008936490 subject "Semiconductors Defects.".
- 2008936490 title "Charged semiconductor defects : structure, thermodynamics and diffusion / Edmund G. Seebauer, Meredith C. Kratzer.".
- 2008936490 type "text".