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2008940492 contributor B11389861.
2008940492 created "c2009.".
2008940492 date "2009".
2008940492 date "c2009.".
2008940492 dateCopyrighted "c2009.".
2008940492 description "1 Introduction 1 -- 1.1 Why OFETs? 1 -- 1.2 A very brief history of OFETs 2 -- 1.3 Organization of this book 3 -- 2 The physics of organic semiconductors 5 -- 2.1 Free electron model 5 -- 2.1.1 Carbon is special 5 -- 2.1.2 Conjugated molecules as a particle-in-a-box 5 -- 2.1.3 Energy levels in semiconducting polymers 10 -- 2.1.4 Applying the free electron model to small conjugated molecules 11 -- 2.2 Charge and energy carriers in conjugated molecules 11 -- 2.2.1 Carriers in organic semiconductors: n-type or p-type? 14 -- 2.2.2 Electron rich and electron poor materials 15 -- 2.3 Conclusion 15 -- 3 Organic semiconductor materials for OFETs 17 -- 3.1 Major classes of organic semiconductors 17 -- 3.1.1 Polymer semiconductors 17 -- 3.2 Small molecule semiconductors 20 -- 3.2.1 Air Stability 25 -- 3.2.2 Organic conductors 26 -- 3.3 Conclusions 26 -- 4 Basic OFET fabrication 29 -- 4.1 Introduction 29 -- 4.2 Basic OFET structure and operation 29 -- 4.3 Unit operations 30 -- 4.3.1 Thermal evaporation 30 -- 4.3.2 Liquid deposition 40 -- 4.3.3 Polymer CVD 41 -- 4.3.4 Other applicable PVD and CVD processes 42 -- 4.3.5 Subtractive patterning operations 43 -- 4.3.6 Etching 45 -- 4.4 Processing considerations for high crystallinity 45 -- 4.4.1 Polymer crystallinity 45 -- 4.4.2 Stranski-Krastanov growth of small molecule crystallites 46 -- 4.4.3 Threshold voltage and bias stress 49 -- 4.5 Several archetypical process flows and variants 49 -- 4.5.1 Shadow masking 50 -- 4.5.2 Parylene encapsulation 51 -- 4.5.3 PVA resist 52 -- 4.5.4 Subtractive inkjet/digital lithography 53 -- 4.6 Conclusions 55 -- 5 Advanced OFET fabrication 57 -- 5.1 Introduction 57 -- 5.2 Source and drain contacts 57 -- 5.2.1 Work function considerations 57 -- 5.2.2 Top vs. bottom contacts 60 -- 5.2.3 Treatment of contacts 61 -- 5.2.4 Creation of lithographic top contact devices 63 -- 5.3 Gate dielectrics 63 -- 5.3.1 Characteristics of gate dielectrics 63 -- 5.3.2 Crystal structure improvement 64 -- 5.3.3 SAM gate dielectrics 65 -- 5.3.4 Introduction of surface dipoles 65 -- 5.3.5 Functional gate dielectrics 66 -- 5.4 Air sensitivity and encapsulation 66 -- 5.5 Emerging deposition and patterning processes 68 -- 5.5.1 LITI 68 -- 5.5.2 OVPD 68 -- 5.5.3 Surface energy modulation 68 -- 5.6 Alternative OFET designs 69 -- 5.6.1 SIT 69 -- 5.6.2 Reduced patterning processes 70 -- 5.6.3 Electrochemical OFETs 72 -- 5.7 Self-aligned OFETs 73 -- 5.8 Conclusions 74 -- 6 Modeling and characterization 75 -- 6.1 Models 75 -- 6.1.1 The role of models 75 -- 6.1.2 The IEEE 1620 standard 75 -- 6.1.3 Long channel silicon device operation 75 -- 6.1.4 Long channel silicon device model 78 -- 6.2 Parameters 80 -- 6.2.1 Mobility 80 -- 6.2.2 Threshold voltage 82 -- 6.2.3 Contact resistance 86 -- 6.2.4 Hysteresis/bias-stress 88 -- 6.2.5 Gate leakage 90 -- 6.2.6 Subthreshold slope 91 -- 6.2.7 Output conductance 91 -- 6.3 Characterization 92 -- 6.3.1 Gate sweep/transfer characteristic 93 -- 6.3.2 Drain sweep/output characteristic 93 -- 6.3.3 Capacitance 94 -- 6.3.4 Gate leakage 95 -- 6.4 Device model 95 -- 6.5 Parameter summary 96 -- 6.5.1 The limits of curve fitting in amorphous systems 98 -- 6.5.2 Measurement and reporting 101 -- 6.6 Conclusions 101 -- 7 OFET applications 103 -- 7.1 Displays 103 -- 7.2 Mechanical sensors 105 -- 7.3 Imagers 106 -- 7.4 RFID and logic 107 -- 7.5 Conclusions 107.".
2008940492 description "Includes bibliographical references (p. [137]-146) and index.".
2008940492 extent "xii, 148 p. :".
2008940492 format "image/jpeg".
2008940492 identifier "0387921338 (alk. paper)".
2008940492 identifier "0387921346 (e-ISBN)".
2008940492 identifier "9780387921334 (alk. paper)".
2008940492 identifier "9780387921341 (e-ISBN)".
2008940492 identifier bsz302461124cov.htm.
2008940492 identifier 585393451.PDF.
2008940492 issued "2009".
2008940492 issued "c2009.".
2008940492 language "eng".
2008940492 publisher "New York, NY : Springer,".
2008940492 subject "537.622 22 22".
2008940492 subject "Organic field-effect transistors.".
2008940492 subject "TK7871.95 .K96 2009".
2008940492 tableOfContents "1 Introduction 1 -- 1.1 Why OFETs? 1 -- 1.2 A very brief history of OFETs 2 -- 1.3 Organization of this book 3 -- 2 The physics of organic semiconductors 5 -- 2.1 Free electron model 5 -- 2.1.1 Carbon is special 5 -- 2.1.2 Conjugated molecules as a particle-in-a-box 5 -- 2.1.3 Energy levels in semiconducting polymers 10 -- 2.1.4 Applying the free electron model to small conjugated molecules 11 -- 2.2 Charge and energy carriers in conjugated molecules 11 -- 2.2.1 Carriers in organic semiconductors: n-type or p-type? 14 -- 2.2.2 Electron rich and electron poor materials 15 -- 2.3 Conclusion 15 -- 3 Organic semiconductor materials for OFETs 17 -- 3.1 Major classes of organic semiconductors 17 -- 3.1.1 Polymer semiconductors 17 -- 3.2 Small molecule semiconductors 20 -- 3.2.1 Air Stability 25 -- 3.2.2 Organic conductors 26 -- 3.3 Conclusions 26 -- 4 Basic OFET fabrication 29 -- 4.1 Introduction 29 -- 4.2 Basic OFET structure and operation 29 -- 4.3 Unit operations 30 -- 4.3.1 Thermal evaporation 30 -- 4.3.2 Liquid deposition 40 -- 4.3.3 Polymer CVD 41 -- 4.3.4 Other applicable PVD and CVD processes 42 -- 4.3.5 Subtractive patterning operations 43 -- 4.3.6 Etching 45 -- 4.4 Processing considerations for high crystallinity 45 -- 4.4.1 Polymer crystallinity 45 -- 4.4.2 Stranski-Krastanov growth of small molecule crystallites 46 -- 4.4.3 Threshold voltage and bias stress 49 -- 4.5 Several archetypical process flows and variants 49 -- 4.5.1 Shadow masking 50 -- 4.5.2 Parylene encapsulation 51 -- 4.5.3 PVA resist 52 -- 4.5.4 Subtractive inkjet/digital lithography 53 -- 4.6 Conclusions 55 -- 5 Advanced OFET fabrication 57 -- 5.1 Introduction 57 -- 5.2 Source and drain contacts 57 -- 5.2.1 Work function considerations 57 -- 5.2.2 Top vs. bottom contacts 60 -- 5.2.3 Treatment of contacts 61 -- 5.2.4 Creation of lithographic top contact devices 63 -- 5.3 Gate dielectrics 63 -- 5.3.1 Characteristics of gate dielectrics 63 -- 5.3.2 Crystal structure improvement 64 -- 5.3.3 SAM gate dielectrics 65 -- 5.3.4 Introduction of surface dipoles 65 -- 5.3.5 Functional gate dielectrics 66 -- 5.4 Air sensitivity and encapsulation 66 -- 5.5 Emerging deposition and patterning processes 68 -- 5.5.1 LITI 68 -- 5.5.2 OVPD 68 -- 5.5.3 Surface energy modulation 68 -- 5.6 Alternative OFET designs 69 -- 5.6.1 SIT 69 -- 5.6.2 Reduced patterning processes 70 -- 5.6.3 Electrochemical OFETs 72 -- 5.7 Self-aligned OFETs 73 -- 5.8 Conclusions 74 -- 6 Modeling and characterization 75 -- 6.1 Models 75 -- 6.1.1 The role of models 75 -- 6.1.2 The IEEE 1620 standard 75 -- 6.1.3 Long channel silicon device operation 75 -- 6.1.4 Long channel silicon device model 78 -- 6.2 Parameters 80 -- 6.2.1 Mobility 80 -- 6.2.2 Threshold voltage 82 -- 6.2.3 Contact resistance 86 -- 6.2.4 Hysteresis/bias-stress 88 -- 6.2.5 Gate leakage 90 -- 6.2.6 Subthreshold slope 91 -- 6.2.7 Output conductance 91 -- 6.3 Characterization 92 -- 6.3.1 Gate sweep/transfer characteristic 93 -- 6.3.2 Drain sweep/output characteristic 93 -- 6.3.3 Capacitance 94 -- 6.3.4 Gate leakage 95 -- 6.4 Device model 95 -- 6.5 Parameter summary 96 -- 6.5.1 The limits of curve fitting in amorphous systems 98 -- 6.5.2 Measurement and reporting 101 -- 6.6 Conclusions 101 -- 7 OFET applications 103 -- 7.1 Displays 103 -- 7.2 Mechanical sensors 105 -- 7.3 Imagers 106 -- 7.4 RFID and logic 107 -- 7.5 Conclusions 107.".
2008940492 title "Organic field effect transistors : theory, fabrication and characterization / Ioannis Kymissis.".
2008940492 type "text".