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- 2010046886 contributor B11792900.
- 2010046886 contributor B11792901.
- 2010046886 created "2011.".
- 2010046886 date "2011".
- 2010046886 date "2011.".
- 2010046886 dateCopyrighted "2011.".
- 2010046886 description "Includes bibliographical references and index.".
- 2010046886 description "Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.".
- 2010046886 extent "xvii, 470 p. :".
- 2010046886 identifier "9780521516846 (hardback)".
- 2010046886 identifier 9780521516846.jpg.
- 2010046886 issued "2011".
- 2010046886 issued "2011.".
- 2010046886 language "eng".
- 2010046886 publisher "Cambridge ; New York : Cambridge University Press,".
- 2010046886 subject "004.5/3 22".
- 2010046886 subject "Electron transport.".
- 2010046886 subject "Metal oxide semiconductors Design and construction.".
- 2010046886 subject "Nanoelectronics.".
- 2010046886 subject "TECHNOLOGY & ENGINEERING / Electronics / Optoelectronics bisacsh.".
- 2010046886 subject "TK7871.99.M44 E76 2011".
- 2010046886 tableOfContents "Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.".
- 2010046886 title "Nanoscale MOS transistors : semi-classical transport and applications / David Esseni, Pierpaolo Palestri, Luca Selmi.".
- 2010046886 type "text".
