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- 2011046210 contributor B12154143.
- 2011046210 contributor B12154144.
- 2011046210 created "c2012.".
- 2011046210 date "2012".
- 2011046210 date "c2012.".
- 2011046210 dateCopyrighted "c2012.".
- 2011046210 description "Includes bibliographical references and index.".
- 2011046210 extent "xiv, 189 p. :".
- 2011046210 identifier "1439807450 (hbk. : alk. paper)".
- 2011046210 identifier "9781439807453 (hbk. : alk. paper)".
- 2011046210 issued "2012".
- 2011046210 issued "c2012.".
- 2011046210 language "eng".
- 2011046210 publisher "Boca Raton, FL : CRC Press,".
- 2011046210 subject "004.568 23".
- 2011046210 subject "Change of state (Physics) Industrial applications.".
- 2011046210 subject "Flash memories (Computers)".
- 2011046210 subject "Magnetic memory (Computers)".
- 2011046210 subject "Semiconductor storage devices.".
- 2011046210 subject "TK7895.M4 L385 2012".
- 2011046210 title "Nonvolatile memory design : magnetic, resistive, and phase change / Hai Li, Yiran Chen.".
- 2011046210 type "text".