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- 2012032168 contributor B12464395.
- 2012032168 date "2013".
- 2012032168 description "Machine generated contents note: 1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE.".
- 2012032168 extent "xi, 731 pages :".
- 2012032168 identifier "9780123878397 (hardback)".
- 2012032168 issued "2013".
- 2012032168 language "eng".
- 2012032168 subject "621.381 23".
- 2012032168 subject "Molecular beam epitaxy.".
- 2012032168 subject "Optoelectronic devices Materials.".
- 2012032168 subject "QC611.6.M64 M645 2013".
- 2012032168 subject "Semiconductors Materials.".
- 2012032168 tableOfContents "Machine generated contents note: 1. Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects; 2. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future; 3. Growth of Semiconductor Nanowires by Molecular Beam Epitaxy; 4. Droplet Epitaxy of Nanostructures; 5. Self-assembled Quantum Dots; 6. Migration Enhanced Epitaxy of Low Dimensional Structures; 7. Surfactant-modified Epitaxy; 8. MBE Growth of High Mobility 2DEG; 9. MBE of GaAsBi; 10. Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys; 11. MBE of Dilute Nitride Optoelectronic Devices; 12. The Effects of Antimony During MBE Growth; 13. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications; 14. In-rich InGaN; 15. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices; 16. Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors; 17. MBE of Semiconducting Oxides; 18. ZnO Materials and Devices grown by MBE; 19. MBE of Complex Oxides; 20. Epitaxial Systems Combining Oxides and Semiconductors; 21. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor; 22. Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic; 23. Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials; 24. MBE of Semimagnetic Quantum Dots; 25. MBE Growth of Graphene; 26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers; 27. Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators; 28. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth; 29. MBE of II-VI Lasers; 30. MBE Growth of Terahertz Quantum Cascade Lasers; 31. MBE as a Mass Production Technique; 32. Mass production of optoelectronic devices: LEDs, lasers, VCSELs; 33. Mass Production of Sensors Grown by MBE.".
- 2012032168 title "Molecular beam epitaxy : from research to mass production / edited by Mohamed Henini.".
- 2012032168 type "text".