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- 2012943374 contributor B12702538.
- 2012943374 contributor B12702539.
- 2012943374 created "c2013.".
- 2012943374 date "2013".
- 2012943374 date "c2013.".
- 2012943374 dateCopyrighted "c2013.".
- 2012943374 description "Includes bibliographical references and index.".
- 2012943374 description "Variability in nanometer technologies and impact on SRAM -- Variation-tolerant SRAM write and read assist techniques -- Reducing SRAM power using fine-grained wordline pulse width control -- A methodology for statistical estimation of read access yield in SRAMs -- Characterization of SRAM sense amplifier input offset for yield prediction.".
- 2012943374 extent "xvi, 170 p. :".
- 2012943374 identifier "1461417481 (alk. paper)".
- 2012943374 identifier "9781461417484 (alk. paper)".
- 2012943374 issued "2013".
- 2012943374 issued "c2013.".
- 2012943374 language "eng".
- 2012943374 publisher "New York : Springer,".
- 2012943374 subject "Random access memory.".
- 2012943374 subject "TK7895.M4 A26 2013".
- 2012943374 tableOfContents "Variability in nanometer technologies and impact on SRAM -- Variation-tolerant SRAM write and read assist techniques -- Reducing SRAM power using fine-grained wordline pulse width control -- A methodology for statistical estimation of read access yield in SRAMs -- Characterization of SRAM sense amplifier input offset for yield prediction.".
- 2012943374 title "Nanometer variation-tolerant SRAM : circuits and statistical design for yield / Mohamed H. Abu-Rahma, Mohab Anis.".
- 2012943374 type "text".