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- 2013427460 contributor B12812383.
- 2013427460 date "2013".
- 2013427460 description "General properties of nitrides -- Doping: determination of impurity and carrier concentrations -- Metal contacts -- Carrier transport -- The p-n junction -- Optical processes -- Light-emitting diodes and lighting -- Semiconductor lasers: light amplification by stimulated emission of radiation -- Field effect transistors -- Index.".
- 2013427460 description "Includes bibliographical references and index.".
- 2013427460 extent "xiv, 460 pages :".
- 2013427460 identifier "3527411011 (print)".
- 2013427460 identifier "9783527411016 (print)".
- 2013427460 issued "2013".
- 2013427460 language "eng".
- 2013427460 subject "Nitrides.".
- 2013427460 subject "Semiconductors.".
- 2013427460 subject "TK7871.99.N58 M67 2013".
- 2013427460 tableOfContents "General properties of nitrides -- Doping: determination of impurity and carrier concentrations -- Metal contacts -- Carrier transport -- The p-n junction -- Optical processes -- Light-emitting diodes and lighting -- Semiconductor lasers: light amplification by stimulated emission of radiation -- Field effect transistors -- Index.".
- 2013427460 title "Nitride semiconductor devices : fundamentals and applications / Hadis Morkoç.".
- 2013427460 type "text".