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- 2013427739 abstract "Annotation Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.Silicon-germanium (SiGe) nanostructuresreviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapor deposition. This part also includes chapters covering strain engineering and modeling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices -- Source other than Library of Congress.".
- 2013427739 contributor B12812468.
- 2013427739 created "2011.".
- 2013427739 date "2011".
- 2013427739 date "2011.".
- 2013427739 dateCopyrighted "2011.".
- 2013427739 description "Annotation Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices.Silicon-germanium (SiGe) nanostructuresreviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapor deposition. This part also includes chapters covering strain engineering and modeling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices -- Source other than Library of Congress.".
- 2013427739 description "Includes bibliographical references and index.".
- 2013427739 extent "xx, 627 p. :".
- 2013427739 identifier "1845696891".
- 2013427739 identifier "9781845696894".
- 2013427739 isPartOf "Woodhead Publishing in materials".
- 2013427739 isPartOf "Woodhead Publishing in materials.".
- 2013427739 issued "2011".
- 2013427739 issued "2011.".
- 2013427739 language "eng".
- 2013427739 publisher "Cambridge, UK : Philadelphia, PA : Woodhead Publishing,".
- 2013427739 subject "621.3815 22".
- 2013427739 subject "Electronic circuits.".
- 2013427739 subject "Germanium alloys.".
- 2013427739 subject "Germaniumverbindungen. swd".
- 2013427739 subject "Nanoelectronics.".
- 2013427739 subject "Nanostructured materials.".
- 2013427739 subject "Nanostrukturiertes Material. swd".
- 2013427739 subject "Siliciumhalbleiter. swd".
- 2013427739 subject "Silicon alloys.".
- 2013427739 subject "T174.7 .S55 2011".
- 2013427739 subject "TA418.9.N35 S555 2011".
- 2013427739 title "Silicon-germanium (SiGe) nanostructures : production, properties and applications in electronics / edited by Yasuhiro Shiraki and Noritaka Usami.".
- 2013427739 type "text".