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- 76608381 contributor B2992978.
- 76608381 created "1977.".
- 76608381 date "1977".
- 76608381 date "1977.".
- 76608381 dateCopyrighted "1977.".
- 76608381 description "Includes bibliographical references.".
- 76608381 extent "vii, 28 p. :".
- 76608381 isPartOf "NBS special publication ; 400-33".
- 76608381 isPartOf "NBS special publication ; 400-33.".
- 76608381 isPartOf "Semiconductor measurement technology".
- 76608381 issued "1977".
- 76608381 issued "1977.".
- 76608381 language "eng".
- 76608381 publisher "Washington : U.S. Dept. of Commerce, National Bureau of Standards ; for sale by the Supt. of Docs., U.S. Govt. Print. Off.,".
- 76608381 subject "602/.1 s 546/.683".
- 76608381 subject "Electric resistance.".
- 76608381 subject "Electron mobility.".
- 76608381 subject "QC100 .U57 no. 400-33 QC611.8.S5".
- 76608381 subject "Semiconductor doping.".
- 76608381 subject "Silicon Electric properties.".
- 76608381 title "The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon / Sheng S. Li.".
- 76608381 type "text".