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- 77499433%2F%2Fr822 contributor B3168318.
- 77499433%2F%2Fr822 contributor B3168319.
- 77499433%2F%2Fr822 created "1968.".
- 77499433%2F%2Fr822 date "1968".
- 77499433%2F%2Fr822 date "1968.".
- 77499433%2F%2Fr822 dateCopyrighted "1968.".
- 77499433%2F%2Fr822 description "Bibliography: p. 9.".
- 77499433%2F%2Fr822 extent "10 p.".
- 77499433%2F%2Fr822 isPartOf "Farnborough, Eng. (Hampshire) Royal Aircraft Establishment. Library translation no. 1287".
- 77499433%2F%2Fr822 isPartOf "Royal Aircraft Establishment. Library translation no. 1287".
- 77499433%2F%2Fr822 issued "1968".
- 77499433%2F%2Fr822 issued "1968.".
- 77499433%2F%2Fr822 language "eng".
- 77499433%2F%2Fr822 language "engund".
- 77499433%2F%2Fr822 publisher "Farnborough [Eng.] Ministry of Technology,".
- 77499433%2F%2Fr822 subject "629.13/008 s".
- 77499433%2F%2Fr822 subject "Gallium arsenide semiconductors.".
- 77499433%2F%2Fr822 subject "Solar cells.".
- 77499433%2F%2Fr822 subject "TL507 .F3 no. 1287".
- 77499433%2F%2Fr822 title "A study of the electrical characteristics of GaAs p-n junctions used as solar cells, by M. B. Kagan, A. P. Landsman [and] B. A. Kholev. [Translated by Dr. Toms]".
- 77499433%2F%2Fr822 type "text".