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- 81600162 contributor B4141543.
- 81600162 contributor B4141544.
- 81600162 contributor B4141545.
- 81600162 created "1982]".
- 81600162 date "1982".
- 81600162 date "1982]".
- 81600162 dateCopyrighted "1982]".
- 81600162 description "Includes bibliographical references.".
- 81600162 extent "v, 52 p. :".
- 81600162 isPartOf "NBS special publication ; 400-71".
- 81600162 isPartOf "Semiconductor measurement technology".
- 81600162 issued "1982".
- 81600162 issued "1982]".
- 81600162 language "eng".
- 81600162 publisher "Washington, D.C. : U.S. Dept. of Commerce, National Bureau of Standards ; [Springfield, VA : National Technical Information Service, distributor,".
- 81600162 subject "Diodes, Schottky=barrier.".
- 81600162 subject "QC100 .U57 no. 400-71 TK7871.89.S35".
- 81600162 subject "Semiconductors Testing.".
- 81600162 title "Differential capacitance-voltage profiling of schottky barrier diodes for measuring implanted depth distributions in silicon / R.G. Wilson and D.M. Jamba.".
- 81600162 type "text".