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- 92007286 contributor B6619791.
- 92007286 created "c1992.".
- 92007286 date "1992".
- 92007286 date "c1992.".
- 92007286 dateCopyrighted "c1992.".
- 92007286 description "Includes bibliographical references and indexes.".
- 92007286 extent "xviii, 318 p. :".
- 92007286 identifier "0471573299 (cloth : acid-free)".
- 92007286 identifier 92007286.html.
- 92007286 identifier 92007286.html.
- 92007286 issued "1992".
- 92007286 issued "c1992.".
- 92007286 language "eng".
- 92007286 publisher "New York : Wiley,".
- 92007286 subject "537.6/226 20".
- 92007286 subject "Gallium arsenide semiconductors.".
- 92007286 subject "Indium alloys.".
- 92007286 subject "Indium phosphide.".
- 92007286 subject "QC611.8.G3 A33 1992".
- 92007286 title "Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / Sadao Adachi.".
- 92007286 type "text".