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- 93007842 contributor B6898906.
- 93007842 contributor B6898907.
- 93007842 created "c1993.".
- 93007842 date "1993".
- 93007842 date "c1993.".
- 93007842 dateCopyrighted "c1993.".
- 93007842 description "Includes bibliographical references (p. 399-421) and index.".
- 93007842 extent "xiv, 428 p. :".
- 93007842 identifier "038756540X (New York : acid-free paper)".
- 93007842 identifier "354056540X (Berlin : acid-free paper)".
- 93007842 isPartOf "Springer series in materials science ; v. 26.".
- 93007842 isPartOf "Springer series in materials sciences ; 26".
- 93007842 issued "1993".
- 93007842 issued "c1993.".
- 93007842 language "eng".
- 93007842 publisher "Berlin ; New York : Springer-Verlag,".
- 93007842 subject "621.3815/2 20".
- 93007842 subject "Gallium arsenide semiconductors.".
- 93007842 subject "Molecular beam epitaxy.".
- 93007842 subject "QC611.6.M64 P36 1993".
- 93007842 title "Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heterostructures / M.B. Panish, H. Temkin.".
- 93007842 type "text".