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- 95083752 contributor B7516080.
- 95083752 contributor B7516081.
- 95083752 created "c1996.".
- 95083752 date "1996".
- 95083752 date "c1996.".
- 95083752 dateCopyrighted "c1996.".
- 95083752 description "Includes bibliographical references and indexes.".
- 95083752 extent "x, 528 p. :".
- 95083752 identifier "1566771544".
- 95083752 isPartOf "Proceedings (Electrochemical Society) ; v. 96-4.".
- 95083752 isPartOf "Proceedings / Electrochemical Society ; v. 96-4".
- 95083752 issued "1996".
- 95083752 issued "c1996.".
- 95083752 language "eng".
- 95083752 publisher "Pennington, NJ : Electrochemical Society,".
- 95083752 subject "621.3815/2 21".
- 95083752 subject "Crystals Defects Mathematical models Congresses.".
- 95083752 subject "Ion implantation Mathematical models Congresses.".
- 95083752 subject "Semiconductors Mathematical models Congresses.".
- 95083752 subject "TK7871.85 .I5835 1996".
- 95083752 title "Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology / editors, G.R. Srinivasan, C.S. Murthy, S.T. Dunham.".
- 95083752 type "text".