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- 95189113 contributor B7610907.
- 95189113 created "1994.".
- 95189113 date "1994".
- 95189113 date "1994.".
- 95189113 dateCopyrighted "1994.".
- 95189113 description "Includes bibliographical references (p. 85-91).".
- 95189113 description "Thesis (doctorate)--Swiss Federal Institute of Technology Zurich.".
- 95189113 extent "ii, 95 p. :".
- 95189113 identifier "3907574036".
- 95189113 issued "1994".
- 95189113 issued "1994.".
- 95189113 language "eng".
- 95189113 publisher "Zurich : Physical Electronics Laboratory, Swiss Federal Institute of Technology,".
- 95189113 subject "Metal oxide semiconductors Defects.".
- 95189113 subject "Semiconductor switches Defects.".
- 95189113 subject "Silicon Effect of temperature on.".
- 95189113 subject "Silicon crystals Defects.".
- 95189113 subject "TK7871.99.M44 D36 1994".
- 95189113 title "Defects in silicon induced by high temperature treatment and their influence on MOS-devices : a thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences / presented by Michael Dammann.".
- 95189113 type "text".