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- 96043441 contributor B7785719.
- 96043441 contributor B7785720.
- 96043441 contributor B7785721.
- 96043441 created "c1996.".
- 96043441 date "1996".
- 96043441 date "c1996.".
- 96043441 dateCopyrighted "c1996.".
- 96043441 description "Includes bibliographical references and index.".
- 96043441 extent "xviii, 530 p. :".
- 96043441 identifier "0792342968 (HB : acid-free paper)".
- 96043441 isPartOf "NATO ASI series. Partnership sub-series 3, High technology ; vol. 17.".
- 96043441 isPartOf "NATO ASI series. Partnership sub-series 3. High technology ; vol. 17".
- 96043441 issued "1996".
- 96043441 issued "c1996.".
- 96043441 language "eng".
- 96043441 publisher "Dordrecht ; Boston : Kluwer Academic,".
- 96043441 subject "546/.683 21".
- 96043441 subject "QC611.8.S5 E27 1996".
- 96043441 subject "Semiconductors Defects.".
- 96043441 subject "Silicon Oxygen content Congresses.".
- 96043441 subject "Silicon crystals Defects Congresses.".
- 96043441 title "Early stages of oxygen precipitation in silicon / edited by R. Jones.".
- 96043441 type "text".